講演名 | 2007/6/18 Accurate Physical DC and AC Models of High-Voltage LDMOSFETs , |
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抄録(和) | |
抄録(英) | Accurate physical DC and AC models of 60V lateral double diffused MOSFETs (LDMOSFETs) are presented in this paper. These models are based on physical analysis considering device geometry, carrier distributions, mobility degradation effect, the effect of impact ionization, and the phenomena of the electron accumulation. In DC model, we divide LDMOSFETs into two regions to obtain the physical conduction model: one is channel region and the other is drift region. The channel region model is modified BSIM3v3 model and the drift region is employed voltage dependent resistance model considering electron distributions, the depth of current path, and the depleted length in the drift region. In AC model, we focus on the electron distributions in the drift region. The model is voltage dependent capacitance model considering the electron accumulation at the gate edge and the depletion in the drift region. The modeling results are compared with measured I-V and C-V characteristics and show good agreements with the measured results of devices within 10% error. |
キーワード(和) | |
キーワード(英) | LDMOSFET / physical model / DC model / AC model |
資料番号 | ED2007-124,SDM2007-129 |
発行日 |
研究会情報 | |
研究会 | ED |
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開催期間 | 2007/6/18(から1日開催) |
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委員長氏名(和) | |
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幹事氏名(和) | |
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幹事補佐氏名(和) | |
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講演論文情報詳細 | |
申込み研究会 | Electron Devices (ED) |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | Accurate Physical DC and AC Models of High-Voltage LDMOSFETs |
サブタイトル(和) | |
キーワード(1)(和/英) | / LDMOSFET |
第 1 著者 氏名(和/英) | / Ki-Soo Nam |
第 1 著者 所属(和/英) | Division of Electrical and Computer Engineering, Hanyang University |
発表年月日 | 2007/6/18 |
資料番号 | ED2007-124,SDM2007-129 |
巻番号(vol) | vol.107 |
号番号(no) | 110 |
ページ範囲 | pp.- |
ページ数 | 4 |
発行日 |