| Presentation | 2007/6/18 Low Gate Leakage Current HEMTs by a New Airbridge Gate and a Liquid Oxidization Surface Feng-Tso Chien, Chien-Liang Chan, Chin-Mu Fang, Chien-Nan Liao, Yao-Tsung Tsai, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Conventional AlGaAs/InGaAs high electron mobility transistors (HEMTs) have high gate leakage current due to gate electrode contact to the exposed channel layer and the carrier provided layer on mesa sidewall. In this study, we used a new no step airbridge gate structure to reduce the gate leakage and improve the breakdown voltage. Furthermore, a liquid oxidization method is applied to further reduce the gate leakage. Those proposed methods didn't increase any masks as compared with the conventional process. In our study, the new airbridge gate structure shows smaller gate-source capacitance than the conventional structure. Therefore, the device high frequency performances can be improved. We will demonstrate the enhanced device characteristics of gate-to-drain breakdown voltages, RF and microwave power performances by using airbridge gate structure and conventional HEMTs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gate leakage / High electron mobility transistor / airbridge |
| Paper # | ED2007-117,SDM2007-122 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low Gate Leakage Current HEMTs by a New Airbridge Gate and a Liquid Oxidization Surface |
| Sub Title (in English) | |
| Keyword(1) | Gate leakage |
| Keyword(2) | High electron mobility transistor |
| Keyword(3) | airbridge |
| 1st Author's Name | Feng-Tso Chien |
| 1st Author's Affiliation | Dept. of Electronic Engineering, Feng-Chia University() |
| 2nd Author's Name | Chien-Liang Chan |
| 2nd Author's Affiliation | Dept. of Electronic Engineering, Feng-Chia University |
| 3rd Author's Name | Chin-Mu Fang |
| 3rd Author's Affiliation | Dept. of Electronic Engineering, Feng-Chia University |
| 4th Author's Name | Chien-Nan Liao |
| 4th Author's Affiliation | Dept. of Electrical Engineering, National Central University |
| 5th Author's Name | Yao-Tsung Tsai |
| 5th Author's Affiliation | Dept. of Electrical Engineering, National Central University |
| Date | 2007/6/18 |
| Paper # | ED2007-117,SDM2007-122 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |