Presentation | 2007/6/18 Enhanced characteristics of In_<0.5>Ga_<0.5>As Quantum Dot Infrared Photo detector with Hydrogen Plasma Treatment Sungho HWAGN, Jindong SONG, Wonjun CHOI, Jungil LEE, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Device characteristics of In_<0.5Ga_<0.5>As/GaAs quantum dot infrared detector (QDIP) have been enhanced with hydrogen plasma treatment. After the hydrogen (H) plasma treatment, the dark currents were noticeably decreased and photoluminescence (PL) intensity was increased by H-passivation of interfacial traps between quantum dots and GaAs and of non-radiative defect centers caused during QD growths. Photo response, which could not be observed in as-grown QDIP due to a large dark currents which obscured the photocurrent signal, was measured successfully after H-treatment due to H-passivation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Quantum dot / infrared photodetector / hydrogen passivation |
Paper # | ED2007-116,SDM2007-121 |
Date of Issue |
Conference Information | |
Committee | ED |
---|---|
Conference Date | 2007/6/18(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Electron Devices (ED) |
---|---|
Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Enhanced characteristics of In_<0.5>Ga_<0.5>As Quantum Dot Infrared Photo detector with Hydrogen Plasma Treatment |
Sub Title (in English) | |
Keyword(1) | Quantum dot |
Keyword(2) | infrared photodetector |
Keyword(3) | hydrogen passivation |
1st Author's Name | Sungho HWAGN |
1st Author's Affiliation | Korea Institute of Science and Technology, Nano Device Research Center:R&D, Samsung electronics() |
2nd Author's Name | Jindong SONG |
2nd Author's Affiliation | Korea Institute of Science and Technology, Nano Device Research Center |
3rd Author's Name | Wonjun CHOI |
3rd Author's Affiliation | Korea Institute of Science and Technology, Nano Device Research Center |
4th Author's Name | Jungil LEE |
4th Author's Affiliation | Korea Institute of Science and Technology, Nano Device Research Center |
Date | 2007/6/18 |
Paper # | ED2007-116,SDM2007-121 |
Volume (vol) | vol.107 |
Number (no) | 110 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |