Presentation 2007/6/18
Enhanced characteristics of In_<0.5>Ga_<0.5>As Quantum Dot Infrared Photo detector with Hydrogen Plasma Treatment
Sungho HWAGN, Jindong SONG, Wonjun CHOI, Jungil LEE,
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Abstract(in English) Device characteristics of In_<0.5Ga_<0.5>As/GaAs quantum dot infrared detector (QDIP) have been enhanced with hydrogen plasma treatment. After the hydrogen (H) plasma treatment, the dark currents were noticeably decreased and photoluminescence (PL) intensity was increased by H-passivation of interfacial traps between quantum dots and GaAs and of non-radiative defect centers caused during QD growths. Photo response, which could not be observed in as-grown QDIP due to a large dark currents which obscured the photocurrent signal, was measured successfully after H-treatment due to H-passivation.
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Keyword(in English) Quantum dot / infrared photodetector / hydrogen passivation
Paper # ED2007-116,SDM2007-121
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Committee ED
Conference Date 2007/6/18(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Enhanced characteristics of In_<0.5>Ga_<0.5>As Quantum Dot Infrared Photo detector with Hydrogen Plasma Treatment
Sub Title (in English)
Keyword(1) Quantum dot
Keyword(2) infrared photodetector
Keyword(3) hydrogen passivation
1st Author's Name Sungho HWAGN
1st Author's Affiliation Korea Institute of Science and Technology, Nano Device Research Center:R&D, Samsung electronics()
2nd Author's Name Jindong SONG
2nd Author's Affiliation Korea Institute of Science and Technology, Nano Device Research Center
3rd Author's Name Wonjun CHOI
3rd Author's Affiliation Korea Institute of Science and Technology, Nano Device Research Center
4th Author's Name Jungil LEE
4th Author's Affiliation Korea Institute of Science and Technology, Nano Device Research Center
Date 2007/6/18
Paper # ED2007-116,SDM2007-121
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
Date of Issue