Presentation 2007/6/18
Design and fabrication of planar GaAs Gunn diodes
M. R. Kim, S. D. Lee, Y. S. Chae, J. K. Rhee,
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Abstract(in English) We designed and fabricated the planar graded-gap injector GaAs Gunn diodes with 1.6μm active length for operation at 94GHz. The fabrication of the Gunn diode is based on MESA etching, ohmic metallization, overlay metallization, and air bridge interconnection. In the first diode, the cathode is situated in the inner circle of the anode electrode having the cathode diameter of 60-70μm We design this one such that the distance between the anode and the cathode metal electrodes has constant distance of 10μm. In the second diode, anode is situated in the inner side of the cathode for module and package of flip-chip bonding structure. The DC measurements are carried out, and the nature of the negative differential resistance, operating voltage, and output power in the graded-gap injector GaAs Gunn diodes are discussed for different device structures.
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Keyword(in English) GaAs Gunn Diode / Negative Differential Resistance
Paper # ED2007-114,SDM2007-119
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Committee ED
Conference Date 2007/6/18(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
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Title (in English) Design and fabrication of planar GaAs Gunn diodes
Sub Title (in English)
Keyword(1) GaAs Gunn Diode
Keyword(2) Negative Differential Resistance
1st Author's Name M. R. Kim
1st Author's Affiliation Millimeter-wave Innovation Technology Research Center, Dongguk University()
2nd Author's Name S. D. Lee
2nd Author's Affiliation Millimeter-wave Innovation Technology Research Center, Dongguk University
3rd Author's Name Y. S. Chae
3rd Author's Affiliation Millimeter-wave Innovation Technology Research Center, Dongguk University
4th Author's Name J. K. Rhee
4th Author's Affiliation Millimeter-wave Innovation Technology Research Center, Dongguk University
Date 2007/6/18
Paper # ED2007-114,SDM2007-119
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
Date of Issue