Presentation 2007/6/18
Studies on channel and gate recess modification of Metamorphic HEMT for the improved breakdown characteristics and RF performance
Seok Gyu Choi, Young Hyun Beak, Jung Hun Oh, Min Han, Seok Ho Bang, Jin Koo Rhee,
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Abstract(in English) In this study, we have performed both the channel modification of the conventional MHEMT (Metamorphic High Electron Mobility Transistor) and the optimization of gate recess width to improve the breakdown characteristics. The modified channel consists of the In_xGa_<1-x>As and the InP layers. Since InP has lower impact ionization coefficient than In_<0.53>Ga_<0.47>As, we have adopted the InP-composite channel in the modified MHEMT. Also, the gate recess width is both functions of breakdown and RF characteristic of a HEMT structure. Therefore, we have studied the breakdown and RF characteristic for various gate recess widths in MHEMT. We have compared breakdown characteristic of the InP-composite channel with that of conventional MHEMT, and we have analyzed the measurement results of the fabricated devices.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Metamorphic HEMT / InP-composite channel MHEMT / Gate recess
Paper # ED2007-112,SDM2007-117
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Committee ED
Conference Date 2007/6/18(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Studies on channel and gate recess modification of Metamorphic HEMT for the improved breakdown characteristics and RF performance
Sub Title (in English)
Keyword(1) Metamorphic HEMT
Keyword(2) InP-composite channel MHEMT
Keyword(3) Gate recess
1st Author's Name Seok Gyu Choi
1st Author's Affiliation Millimeter-wave Innovation Technology Research Center (MINT) Dongguk University()
2nd Author's Name Young Hyun Beak
2nd Author's Affiliation Millimeter-wave Innovation Technology Research Center (MINT) Dongguk University
3rd Author's Name Jung Hun Oh
3rd Author's Affiliation Millimeter-wave Innovation Technology Research Center (MINT) Dongguk University
4th Author's Name Min Han
4th Author's Affiliation Millimeter-wave Innovation Technology Research Center (MINT) Dongguk University
5th Author's Name Seok Ho Bang
5th Author's Affiliation Millimeter-wave Innovation Technology Research Center (MINT) Dongguk University
6th Author's Name Jin Koo Rhee
6th Author's Affiliation Millimeter-wave Innovation Technology Research Center (MINT) Dongguk University
Date 2007/6/18
Paper # ED2007-112,SDM2007-117
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
Date of Issue