Presentation | 2007/6/18 Temperature Effects on Silicon-Oxide-Nitride-Oxide-Silicon Transistors under Channel Hot Electron Injection Operation Han-Soo Joo, Won-Ho Choi, Sung-Soo Park, Tae-Gyu Goo, Ook-Sang Yoo, In-Shik Han, Jae-Chul Om, Seaung-Suk Lee, Gi-Hyun Bae, Hi-Deok Lee, Ga-Won Lee, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The temperature effects on SONOS transistors are investigated. In contrast to a conventional floating-gate memory cell with Fowler-Nordheim (FN) writing, the significant drain current (read current) and the leakage current increase is observed in Channel Hot Electron Injected (CHEI) programmed SONOS cell, which results in the read window narrowing at the high temperatures. The temperature effect is found to be correlated with locally trapped charge profile, whose relation with the read window narrowing. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | read current / charge pumping / nitride profile / temperature effect / gate conduction mechanism / charge width / localized trapping |
Paper # | ED2007-111,SDM2007-116 |
Date of Issue |
Conference Information | |
Committee | ED |
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Conference Date | 2007/6/18(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
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Vice Chair | |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Temperature Effects on Silicon-Oxide-Nitride-Oxide-Silicon Transistors under Channel Hot Electron Injection Operation |
Sub Title (in English) | |
Keyword(1) | read current |
Keyword(2) | charge pumping |
Keyword(3) | nitride profile |
Keyword(4) | temperature effect |
Keyword(5) | gate conduction mechanism |
Keyword(6) | charge width |
Keyword(7) | localized trapping |
1st Author's Name | Han-Soo Joo |
1st Author's Affiliation | Dept. of Electronic Engineering, Chungnam National University() |
2nd Author's Name | Won-Ho Choi |
2nd Author's Affiliation | Dept. of Electronic Engineering, Chungnam National University |
3rd Author's Name | Sung-Soo Park |
3rd Author's Affiliation | Dept. of Electronic Engineering, Chungnam National University |
4th Author's Name | Tae-Gyu Goo |
4th Author's Affiliation | Dept. of Electronic Engineering, Chungnam National University |
5th Author's Name | Ook-Sang Yoo |
5th Author's Affiliation | Dept. of Electronic Engineering, Chungnam National University |
6th Author's Name | In-Shik Han |
6th Author's Affiliation | Dept. of Electronic Engineering, Chungnam National University |
7th Author's Name | Jae-Chul Om |
7th Author's Affiliation | Mobile & FLASH Division, Hynix Semiconductor Inc. |
8th Author's Name | Seaung-Suk Lee |
8th Author's Affiliation | Mobile & FLASH Division, Hynix Semiconductor Inc. |
9th Author's Name | Gi-Hyun Bae |
9th Author's Affiliation | Mobile & FLASH Division, Hynix Semiconductor Inc. |
10th Author's Name | Hi-Deok Lee |
10th Author's Affiliation | Dept. of Electronic Engineering, Chungnam National University |
11th Author's Name | Ga-Won Lee |
11th Author's Affiliation | Dept. of Electronic Engineering, Chungnam National University |
Date | 2007/6/18 |
Paper # | ED2007-111,SDM2007-116 |
Volume (vol) | vol.107 |
Number (no) | 110 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |