Presentation 2007/6/18
Temperature Effects on Silicon-Oxide-Nitride-Oxide-Silicon Transistors under Channel Hot Electron Injection Operation
Han-Soo Joo, Won-Ho Choi, Sung-Soo Park, Tae-Gyu Goo, Ook-Sang Yoo, In-Shik Han, Jae-Chul Om, Seaung-Suk Lee, Gi-Hyun Bae, Hi-Deok Lee, Ga-Won Lee,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The temperature effects on SONOS transistors are investigated. In contrast to a conventional floating-gate memory cell with Fowler-Nordheim (FN) writing, the significant drain current (read current) and the leakage current increase is observed in Channel Hot Electron Injected (CHEI) programmed SONOS cell, which results in the read window narrowing at the high temperatures. The temperature effect is found to be correlated with locally trapped charge profile, whose relation with the read window narrowing.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) read current / charge pumping / nitride profile / temperature effect / gate conduction mechanism / charge width / localized trapping
Paper # ED2007-111,SDM2007-116
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Committee ED
Conference Date 2007/6/18(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Temperature Effects on Silicon-Oxide-Nitride-Oxide-Silicon Transistors under Channel Hot Electron Injection Operation
Sub Title (in English)
Keyword(1) read current
Keyword(2) charge pumping
Keyword(3) nitride profile
Keyword(4) temperature effect
Keyword(5) gate conduction mechanism
Keyword(6) charge width
Keyword(7) localized trapping
1st Author's Name Han-Soo Joo
1st Author's Affiliation Dept. of Electronic Engineering, Chungnam National University()
2nd Author's Name Won-Ho Choi
2nd Author's Affiliation Dept. of Electronic Engineering, Chungnam National University
3rd Author's Name Sung-Soo Park
3rd Author's Affiliation Dept. of Electronic Engineering, Chungnam National University
4th Author's Name Tae-Gyu Goo
4th Author's Affiliation Dept. of Electronic Engineering, Chungnam National University
5th Author's Name Ook-Sang Yoo
5th Author's Affiliation Dept. of Electronic Engineering, Chungnam National University
6th Author's Name In-Shik Han
6th Author's Affiliation Dept. of Electronic Engineering, Chungnam National University
7th Author's Name Jae-Chul Om
7th Author's Affiliation Mobile & FLASH Division, Hynix Semiconductor Inc.
8th Author's Name Seaung-Suk Lee
8th Author's Affiliation Mobile & FLASH Division, Hynix Semiconductor Inc.
9th Author's Name Gi-Hyun Bae
9th Author's Affiliation Mobile & FLASH Division, Hynix Semiconductor Inc.
10th Author's Name Hi-Deok Lee
10th Author's Affiliation Dept. of Electronic Engineering, Chungnam National University
11th Author's Name Ga-Won Lee
11th Author's Affiliation Dept. of Electronic Engineering, Chungnam National University
Date 2007/6/18
Paper # ED2007-111,SDM2007-116
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
Date of Issue