| Presentation | 2007/6/18 Efficient Activation of Dopant in Poly-Si film using Excimer Laser Annealing Takashi NOGUCHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Efficient activation of doped Si film using low temperature process is important to realize a high performance Si TFT. Detailed study on the dopant behavior in Si film annealed by an excimer laser is required. Phosphorus ions were implanted at a high dose (2e15/cm^2) into the Si film of 50 nm thick which was deposited on the insulating glass substrate. Subsequently, UV pulsed excimer laser (308 nm) was exposed by varying the energy condition such as energy density or pulse shot number. The relationship between the conductivity and the crystallinity was analyzed using four point probe, Spectroscopic Ellipsometry (S.E.) in UV-Visible range and Raman scattering. The crystallinity ratio obtained by the S.E. and Raman peak show good correlation. The conductivity increased with improving the crystallinity. By adopting the laser melting and subsequent re-solidified activation, the Si film shows extremely low sheet resistance of 100 ohm/sq.. Clear tensile stress was observed similar to the case for un-doped crystallized Si film. ELA activation subsequent after ion implantation is effective to high-performance Si TFTs in SoP (System on Panel) use. Raman scattering or S.E. analysis has been confirmed an effective non-destructive tool. The mechanism for the efficient dopant activation will be discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Poly-Si / Thin-Film-Transistors (TFTs) / Excimer Laser Annealing (ELA) / Dopant / Conductivity / Resistivity / Spectroscopic Ellipsometry (S.E.) / Raman Scattering / TEM |
| Paper # | ED2007-106,SDM2007-111 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Efficient Activation of Dopant in Poly-Si film using Excimer Laser Annealing |
| Sub Title (in English) | |
| Keyword(1) | Poly-Si |
| Keyword(2) | Thin-Film-Transistors (TFTs) |
| Keyword(3) | Excimer Laser Annealing (ELA) |
| Keyword(4) | Dopant |
| Keyword(5) | Conductivity |
| Keyword(6) | Resistivity |
| Keyword(7) | Spectroscopic Ellipsometry (S.E.) |
| Keyword(8) | Raman Scattering |
| Keyword(9) | TEM |
| 1st Author's Name | Takashi NOGUCHI |
| 1st Author's Affiliation | Dept. of Electrical and Electronics Engineering, University of the Ryukyus() |
| Date | 2007/6/18 |
| Paper # | ED2007-106,SDM2007-111 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |