Presentation | 2007/6/18 Amorphous Oxide Semiconductor based TFTs and Their Circuits Hideya Kumomi, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Amorphous oxide semiconductor (AOS) based TFTs have attracted keen attention since they exhibit more than ten times higher mobility than a-Si:H TFTs even when the active semiconductor layers are deposited at room temperature. Very recently, it has been reported that the AOS TFTs are stable against continuous current stress and show excellent uniformity. The application research has already started as the circuits and the display-panel backplanes are demonstrated. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | amorphous / oxide semiconductor / TFT |
Paper # | ED2007-104,SDM2007-109 |
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Conference Information | |
Committee | ED |
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Conference Date | 2007/6/18(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Amorphous Oxide Semiconductor based TFTs and Their Circuits |
Sub Title (in English) | |
Keyword(1) | amorphous |
Keyword(2) | oxide semiconductor |
Keyword(3) | TFT |
1st Author's Name | Hideya Kumomi |
1st Author's Affiliation | Canon Research Center() |
Date | 2007/6/18 |
Paper # | ED2007-104,SDM2007-109 |
Volume (vol) | vol.107 |
Number (no) | 110 |
Page | pp.pp.- |
#Pages | 232 |
Date of Issue |