Presentation 2007/6/18
Amorphous Oxide Semiconductor based TFTs and Their Circuits
Hideya Kumomi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Amorphous oxide semiconductor (AOS) based TFTs have attracted keen attention since they exhibit more than ten times higher mobility than a-Si:H TFTs even when the active semiconductor layers are deposited at room temperature. Very recently, it has been reported that the AOS TFTs are stable against continuous current stress and show excellent uniformity. The application research has already started as the circuits and the display-panel backplanes are demonstrated.
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Keyword(in English) amorphous / oxide semiconductor / TFT
Paper # ED2007-104,SDM2007-109
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Conference Information
Committee ED
Conference Date 2007/6/18(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Amorphous Oxide Semiconductor based TFTs and Their Circuits
Sub Title (in English)
Keyword(1) amorphous
Keyword(2) oxide semiconductor
Keyword(3) TFT
1st Author's Name Hideya Kumomi
1st Author's Affiliation Canon Research Center()
Date 2007/6/18
Paper # ED2007-104,SDM2007-109
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 232
Date of Issue