Presentation	2007/6/18 Extraction Method of the Interface and Nitride Trap Density in Nitride-Based Charge Trapped Flash Memories Using an Optical Response S. Y. Lee, J. U. Lee, S. H. Seo, K. S. Roh, G. C. Kang, K. Y. Kim, C. M. Choi, K. J. Song, S. R. Park, K. C. Jeon, J. H. Park, C. H. Lee, K. S. Min, D. J. Kim, D. H. Kim, D. M. Kim,
PDF Download Page	PDF download Page Link
Abstract(in Japanese)	(See Japanese page)
Abstract(in English)	Optical characterization method for extracting the energy level of both Si/SiO_2 interface (D_) and nitride trap density (D_) in nitride-based Charge Trapped Flash memories is proposed. As the first method, the D_ is successfully extracted from the optical response of a subthreshold current, without both an electrical stress and substrate current measurement. As the second method, the D_ is successfully extracted from the optical response of a capacitance-voltage (C-V) curve, without both a temperature-dependence and time-dependence measurement. Proposed method is generally applicable to the extraction of both shallow and deep traps in the nitride layer by controlling the wavelength of the optical source.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Charge Trapped Flash memory / nitride trap density / interface trap density / C-V / subthreshold current / optical characterization method
Paper #	ED2007-102,SDM2007-107
Date of Issue

Conference Information
Committee	ED
Conference Date	2007/6/18(1days)
Place (in Japanese)	(See Japanese page)
Place (in English)
Topics (in Japanese)	(See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To	Electron Devices (ED)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Extraction Method of the Interface and Nitride Trap Density in Nitride-Based Charge Trapped Flash Memories Using an Optical Response
Sub Title (in English)
Keyword(1)	Charge Trapped Flash memory
Keyword(2)	nitride trap density
Keyword(3)	interface trap density
Keyword(4)	C-V
Keyword(5)	subthreshold current
Keyword(6)	optical characterization method
1st Author's Name	S. Y. Lee
1st Author's Affiliation	School of Electrical Engineering, Kookmin University()
2nd Author's Name	J. U. Lee
2nd Author's Affiliation	School of Electrical Engineering, Kookmin University
3rd Author's Name	S. H. Seo
3rd Author's Affiliation	School of Electrical Engineering, Kookmin University
4th Author's Name	K. S. Roh
4th Author's Affiliation	School of Electrical Engineering, Kookmin University
5th Author's Name	G. C. Kang
5th Author's Affiliation	School of Electrical Engineering, Kookmin University
6th Author's Name	K. Y. Kim
6th Author's Affiliation	School of Electrical Engineering, Kookmin University
7th Author's Name	C. M. Choi
7th Author's Affiliation	School of Electrical Engineering, Kookmin University
8th Author's Name	K. J. Song
8th Author's Affiliation	School of Electrical Engineering, Kookmin University
9th Author's Name	S. R. Park
9th Author's Affiliation	School of Electrical Engineering, Kookmin University
10th Author's Name	K. C. Jeon
10th Author's Affiliation	School of Electrical Engineering, Kookmin University
11th Author's Name	J. H. Park
11th Author's Affiliation	School of Electrical Engineering, Kookmin University
12th Author's Name	C. H. Lee
12th Author's Affiliation	School of Electrical Engineering, Kookmin University
13th Author's Name	K. S. Min
13th Author's Affiliation	School of Electrical Engineering, Kookmin University
14th Author's Name	D. J. Kim
14th Author's Affiliation	School of Electrical Engineering, Kookmin University
15th Author's Name	D. H. Kim
15th Author's Affiliation	School of Electrical Engineering, Kookmin University
16th Author's Name	D. M. Kim
16th Author's Affiliation	School of Electrical Engineering, Kookmin University
Date	2007/6/18
Paper #	ED2007-102,SDM2007-107
Volume (vol)	vol.107
Number (no)	110
Page	pp.pp.-
#Pages	4
Date of Issue