| Presentation | 2007/6/18 Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application Yu-ichiro Ando, Koji Ueda, Mamoru Kumano, Taizoh Sadoh, Kazumasa Narumi, Yoshihito Maeda, Masanobu Miyao, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ferromagnetic silicide Fe_3Si (Currie temperature: 840 K) has three phases (A2, B2, and DO3), where the DOS-type is an ordered phase and calculated to be spin-polarized at the Fermi level. In addition, the lattice constant (0.565 nm) of Fe_3Si is almost completely equal to that (0.565 nm) of Ge. Therefore, atomically controlled epitaxial growth of Fe_3Si is expected on Ge. This will be a powerful tool to realize Ge channel spin transistors with ultrahigh speed operation and ultralow power consumption. This paper reviews our recent progress in novel epitaxial growth of Fe_3Si on Ge for spintronics application. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ferromagnetic silicide / Fe_3Si / Ge / Molecular beam epitaxy |
| Paper # | ED2007-101,ED2007-101 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application |
| Sub Title (in English) | |
| Keyword(1) | Ferromagnetic silicide |
| Keyword(2) | Fe_3Si |
| Keyword(3) | Ge |
| Keyword(4) | Molecular beam epitaxy |
| 1st Author's Name | Yu-ichiro Ando |
| 1st Author's Affiliation | Department of Electronics, Kyushu University() |
| 2nd Author's Name | Koji Ueda |
| 2nd Author's Affiliation | Department of Electronics, Kyushu University |
| 3rd Author's Name | Mamoru Kumano |
| 3rd Author's Affiliation | Department of Electronics, Kyushu University |
| 4th Author's Name | Taizoh Sadoh |
| 4th Author's Affiliation | Department of Electronics, Kyushu University |
| 5th Author's Name | Kazumasa Narumi |
| 5th Author's Affiliation | Advanced Science Research Cent., Japan Atomic Energy Agency |
| 6th Author's Name | Yoshihito Maeda |
| 6th Author's Affiliation | Department of Energy Science and Technology, Kyoto University |
| 7th Author's Name | Masanobu Miyao |
| 7th Author's Affiliation | Department of Electronics, Kyushu University |
| Date | 2007/6/18 |
| Paper # | ED2007-101,ED2007-101 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |