Presentation | 2007/6/18 DMOS-based avalanche-mode Power-Rail ESD Clamp for a 0.35μm BCD Process Jae-Young PARK, Dong-Jun KIM, Sang-Gyu PARK, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A DMOS-based ESD power-rail clamp is proposed. The operation region of the proposed power-rail clamp is limited to below the onset of the snapback to avoid the danger of latch-up. The total blocking voltage of this new design can be adjusted by changing the width (or number of fingers) of the devices. From the measurement on the devices fabricated using a 0.35μm BCD Process (60V), it was observed that the proposed ESD power-rail clamp can provide 400% higher ESD robustness per silicon area as compared to the conventional clamps with gate-driven DMOS. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | ESD / power-rail clamp / latch-up / DMOS-based |
Paper # | ED2007-98,SDM2007-103 |
Date of Issue |
Conference Information | |
Committee | ED |
---|---|
Conference Date | 2007/6/18(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Electron Devices (ED) |
---|---|
Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | DMOS-based avalanche-mode Power-Rail ESD Clamp for a 0.35μm BCD Process |
Sub Title (in English) | |
Keyword(1) | ESD |
Keyword(2) | power-rail clamp |
Keyword(3) | latch-up |
Keyword(4) | DMOS-based |
1st Author's Name | Jae-Young PARK |
1st Author's Affiliation | Div. of Electrical and Computer Engineering, Hanyang University() |
2nd Author's Name | Dong-Jun KIM |
2nd Author's Affiliation | Div. of Electrical and Computer Engineering, Hanyang University |
3rd Author's Name | Sang-Gyu PARK |
3rd Author's Affiliation | Div. of Electrical and Computer Engineering, Hanyang University |
Date | 2007/6/18 |
Paper # | ED2007-98,SDM2007-103 |
Volume (vol) | vol.107 |
Number (no) | 110 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |