Presentation | 2007/6/18 Analytical Models for Breakdown Voltage and Specific On-Resistance of 6H-SiC Schottky Diodes Yongsung CHUNG, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Analytical expressions for the breakdown voltage and specific on-resistance of 6H-SiC Schottky diodes have been derived successfully by extracting an effective ionization coefficient in 6H-SiC. The breakdown voltages induced from our analytical model are compared with experimental results. The variation of specific on-resistance as a function of doping concentration is also compared with the one reported previously. Good fits with experimental results are found for the breakdown voltage within 10% in error for the doping concentration in the range of 10^<15>~10^<18>cm^<-3>. The analytic results show good agreement with the numerical data for the specific on-resistance in the region of 5×10^<15>~10^<16>cm^<-3>. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | 6H-SiC / Effective Ionization Coefficient / Analytical Model / Breakdown Voltage / Specific On-Resistance |
Paper # | ED2007-97,SDM2007-102 |
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Conference Information | |
Committee | ED |
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Conference Date | 2007/6/18(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Analytical Models for Breakdown Voltage and Specific On-Resistance of 6H-SiC Schottky Diodes |
Sub Title (in English) | |
Keyword(1) | 6H-SiC |
Keyword(2) | Effective Ionization Coefficient |
Keyword(3) | Analytical Model |
Keyword(4) | Breakdown Voltage |
Keyword(5) | Specific On-Resistance |
1st Author's Name | Yongsung CHUNG |
1st Author's Affiliation | Dept. of Fancy Toy Design, Sorabol College() |
Date | 2007/6/18 |
Paper # | ED2007-97,SDM2007-102 |
Volume (vol) | vol.107 |
Number (no) | 110 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |