Presentation 2007/6/18
Analytical Models for Breakdown Voltage and Specific On-Resistance of 6H-SiC Schottky Diodes
Yongsung CHUNG,
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Abstract(in English) Analytical expressions for the breakdown voltage and specific on-resistance of 6H-SiC Schottky diodes have been derived successfully by extracting an effective ionization coefficient in 6H-SiC. The breakdown voltages induced from our analytical model are compared with experimental results. The variation of specific on-resistance as a function of doping concentration is also compared with the one reported previously. Good fits with experimental results are found for the breakdown voltage within 10% in error for the doping concentration in the range of 10^<15>~10^<18>cm^<-3>. The analytic results show good agreement with the numerical data for the specific on-resistance in the region of 5×10^<15>~10^<16>cm^<-3>.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) 6H-SiC / Effective Ionization Coefficient / Analytical Model / Breakdown Voltage / Specific On-Resistance
Paper # ED2007-97,SDM2007-102
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Committee ED
Conference Date 2007/6/18(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analytical Models for Breakdown Voltage and Specific On-Resistance of 6H-SiC Schottky Diodes
Sub Title (in English)
Keyword(1) 6H-SiC
Keyword(2) Effective Ionization Coefficient
Keyword(3) Analytical Model
Keyword(4) Breakdown Voltage
Keyword(5) Specific On-Resistance
1st Author's Name Yongsung CHUNG
1st Author's Affiliation Dept. of Fancy Toy Design, Sorabol College()
Date 2007/6/18
Paper # ED2007-97,SDM2007-102
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
Date of Issue