Presentation 2007/6/18
Optical properties of copper in chalcogenide materials used in programmable metallization cell devices
Hyuk CHOI, Ki-Hyun NAM, Long-Yun JU, Hong-Bay CHUNG,
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Abstract(in English) Programmable Metallization Cell(PMC) Random Access Memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolyte. In this paper, we investigate the nature of thin films formed by the photo-doping of Cu into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ion transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates due to the reaction of Cu with free atoms from the chalcogenide materials.
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Keyword(in English) PMC(Programmable Metallization Cell) / chalcogenide / Cu-doped / solide electrolyte
Paper # ED2007-96,SDM2007-101
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Committee ED
Conference Date 2007/6/18(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
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Title (in English) Optical properties of copper in chalcogenide materials used in programmable metallization cell devices
Sub Title (in English)
Keyword(1) PMC(Programmable Metallization Cell)
Keyword(2) chalcogenide
Keyword(3) Cu-doped
Keyword(4) solide electrolyte
1st Author's Name Hyuk CHOI
1st Author's Affiliation department of Electronic Materials Engineering, Kwangwoon University()
2nd Author's Name Ki-Hyun NAM
2nd Author's Affiliation department of Electronic Materials Engineering, Kwangwoon University
3rd Author's Name Long-Yun JU
3rd Author's Affiliation department of Electronic Materials Engineering, Kwangwoon University
4th Author's Name Hong-Bay CHUNG
4th Author's Affiliation department of Electronic Materials Engineering, Kwangwoon University
Date 2007/6/18
Paper # ED2007-96,SDM2007-101
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
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