| Presentation | 2007/6/18 Fabrication and Properties of Metal-Ferroelectric-Semiconductor Devices Using Ferroelectric VF_2-TrFE Copolymer Films Sang-Hyun Jeong, Soon-Won Jung, Haeng-Chul Choi, Hyung-Sun Yun, Kwang-Ho Kim, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Metal-ferroelectric-semiconductor structures with ferroelectric vinylidene fluoride-trifluoroethylene (VF_2-TrFE) copolymer films were fabricated using spin coating method and demonstrated nonvolatile memory operations. VF_2-TrFE copolymer films were deposited on Si wafer at a spin rate of 2000～4000 rpm and dried on hot plate in air at 70℃. And then VF_2-TrFE copolymer films were annealed in a vacuum ambient at 150℃. X-ray diffraction results showed that the VF_2-TrFE films on Si substrates had β-phase of copolymer structures. The MFS capacitor on a p-type Si(100) wafer had a hysteresis curve with a clockwise rotation, which indicated ferroelectric polarization switching behavior. The dielectric constant was about 9. The typical measured remnant polarization (Pr) and coercive field (Ec) values were about 5.8 μC/cm^2 and 470 kV/cm, respectively. In case of fatigue, there was good polarization degradation property up to about 10^<11> switching cycles using 1 MHz square wave form at ±550kV/cm. Typical gate leakage current density of the MFS capacitor was the order of 10^6 A/cm^2 at the range of within 1 MV/cm, while the leakage current density of the MFIS capacitor was less than 2×10^<-8> A/cm^2 order in the same electric field. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | VF_2-TrFE copolymer / spin-coating / MFS / MFIS |
| Paper # | ED2007-94,SDM2007-99 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and Properties of Metal-Ferroelectric-Semiconductor Devices Using Ferroelectric VF_2-TrFE Copolymer Films |
| Sub Title (in English) | |
| Keyword(1) | VF_2-TrFE copolymer |
| Keyword(2) | spin-coating |
| Keyword(3) | MFS |
| Keyword(4) | MFIS |
| 1st Author's Name | Sang-Hyun Jeong |
| 1st Author's Affiliation | Department of Semiconductor Engineering, Cheongju University() |
| 2nd Author's Name | Soon-Won Jung |
| 2nd Author's Affiliation | IT Convergence & Components Laboratory, Electronics and Telecommunications Research Institute |
| 3rd Author's Name | Haeng-Chul Choi |
| 3rd Author's Affiliation | Department of Semiconductor Engineering, Cheongju University |
| 4th Author's Name | Hyung-Sun Yun |
| 4th Author's Affiliation | Department of Semiconductor Engineering, Cheongju University |
| 5th Author's Name | Kwang-Ho Kim |
| 5th Author's Affiliation | Department of Semiconductor Engineering, Cheongju University |
| Date | 2007/6/18 |
| Paper # | ED2007-94,SDM2007-99 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |