Presentation 2007/6/18
High Performance Bottom-Gated Poly-Si Thin Film Transistors Employing Novel Extended Metal-Pad
Chin-Mu Fang, Ming-Hong Chan, Feng-Tso Chien,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Thin Film Transistor with poly-silicon channel improves kink effect by reducing drain electrical field has been investigated. In this paper, we propose a novel FID poly-silicon Thin Film Transistor with field plate to improve kink effect. By employing field plate overlapped channel, the electric field crowding near drain could be mitigated due to the field plate. We also explored different length of field plate and thickness of passivation oxide by ISE TCAD simulation tool. As the results, it reduces electric field effectively to improve kink effect without sacrificing characteristics too much.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Thin Film Transistors / field-induced drain / kink effect / field plate
Paper # ED2007-92,SDM2007-97
Date of Issue

Conference Information
Committee ED
Conference Date 2007/6/18(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electron Devices (ED)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High Performance Bottom-Gated Poly-Si Thin Film Transistors Employing Novel Extended Metal-Pad
Sub Title (in English)
Keyword(1) Thin Film Transistors
Keyword(2) field-induced drain
Keyword(3) kink effect
Keyword(4) field plate
1st Author's Name Chin-Mu Fang
1st Author's Affiliation Department of Electronic Engineering, Feng-Chia University()
2nd Author's Name Ming-Hong Chan
2nd Author's Affiliation Department of Electronic Engineering, Feng-Chia University
3rd Author's Name Feng-Tso Chien
3rd Author's Affiliation Department of Electronic Engineering, Feng-Chia University
Date 2007/6/18
Paper # ED2007-92,SDM2007-97
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
Date of Issue