| Presentation | 2007/6/18 A Wideband Power Efficient SiGe BiCMOS Medium Power Amplifier Hyun-Cheol BAE, Sang-Hoon KIM, Ja-Yol Lee, Sang-Heung LEE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, a wideband 2.2GHz-4.9GHz Medium Power Amplifier has been designed and fabricated using 0.8um SiGe BiCMOS process technology. Passive elements such like parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This MPA is a two stage design with all matching components and bias circuits integrated on chip. A P1dB of 17.7dBm has been measured with a power gain of 8.7dB at 3.4GHz with a total current consumption of 30mA from a 3 V supply voltage at 25℃ degree. The measured 3dB bandwidth is 2.7GHz and the maximum PAE is 41%, which are very good results for a fully integrated Medium PA. The fabricated circuit occupies a die area of 1.7mm X 0.8mm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiGe / BiCMOS / Inductor / Medium Power Amplifier |
| Paper # | ED2007-63,SDM2007-68 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Wideband Power Efficient SiGe BiCMOS Medium Power Amplifier |
| Sub Title (in English) | |
| Keyword(1) | SiGe |
| Keyword(2) | BiCMOS |
| Keyword(3) | Inductor |
| Keyword(4) | Medium Power Amplifier |
| 1st Author's Name | Hyun-Cheol BAE |
| 1st Author's Affiliation | SiGe Circuit Team, RF Circuit Group, ICCL, ETRI() |
| 2nd Author's Name | Sang-Hoon KIM |
| 2nd Author's Affiliation | SiGe Circuit Team, RF Circuit Group, ICCL, ETRI |
| 3rd Author's Name | Ja-Yol Lee |
| 3rd Author's Affiliation | SiGe Circuit Team, RF Circuit Group, ICCL, ETRI |
| 4th Author's Name | Sang-Heung LEE |
| 4th Author's Affiliation | SiGe Circuit Team, RF Circuit Group, ICCL, ETRI |
| Date | 2007/6/18 |
| Paper # | ED2007-63,SDM2007-68 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |