Presentation 2007/6/18
3-Dimensional Vertically Integrated Nano-Shell All-Around-Gate MOSFET
Chung-Jin Kim, Yang-Kyu Choi,
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Abstract(in English) This paper reports a novel 3-dimensional vertical nano-shell all-around-gate MOSFET for ultimate device scaling. The vertical nano-shell structure can be realized by introduction of a silicon thin-body formed by chemical vapor deposition (CVD) of poly-silicon and subsequent solid phase crystallization (SPC) as well as incorporation of an electrically independent inner-gate. It was verified that the vertical nano-shell MOSFET offers immunity to short-channel effects through a comparison of device performances between a nano-shell structure (double all-around-gate) and a nano-wire structure (single all-around-gate) with the aid of a SILVACO[○!R] 3-D simulator. With diverse modulations of the bias from the independently operated inner gate, the electrical characteristics of the MOSFET and the feasibility of application to a low-power transistor are investigated.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Nano-shell structure / All-around-gate / Solid phase crystallization (SPC) / Short-channel effect (SCE)
Paper # ED2007-61,SDM2007-66
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Conference Information
Committee ED
Conference Date 2007/6/18(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 3-Dimensional Vertically Integrated Nano-Shell All-Around-Gate MOSFET
Sub Title (in English)
Keyword(1) Nano-shell structure
Keyword(2) All-around-gate
Keyword(3) Solid phase crystallization (SPC)
Keyword(4) Short-channel effect (SCE)
1st Author's Name Chung-Jin Kim
1st Author's Affiliation School of Electrical Engineering & Computer Science, Korea Advanced Institute of Science and Technology()
2nd Author's Name Yang-Kyu Choi
2nd Author's Affiliation School of Electrical Engineering & Computer Science, Korea Advanced Institute of Science and Technology
Date 2007/6/18
Paper # ED2007-61,SDM2007-66
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
Date of Issue