講演名 | 2007/6/18 Influence of Pt-Related Deep Traps Formed in Rectifier Junctions on High-Speed and Low-Leakage Properties , |
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抄録(和) | |
抄録(英) | We have investigated the properties of platinum-related deep traps presenting three energy levels inside the silicon band gap. Capacitance transient measurements were performed for rectifying diodes made of Au and Ni for Schottky and Al/Ti for ohmic contacts. Their electrical properties were characterized by I-V and C-V measurements while varying junction temperature up to 200℃. From the experimental results, we found that both the minority carrier lifetime and the leakage current were closely related to the status of the traps presenting at E_c-0.52eV. The drive-in process parameters for platinum were observed to result in substantial changes in deep trap distribution and consequently electrical properties. The precisely controlled devices with Pt drove-in presented the turn on voltage of 1.1 V and reverse recovery time of 20ns. We elucidated the influence of Pt-related deep traps into the pn multi/planar junction structures in conjunction with high-speed and low-leakage properties. |
キーワード(和) | |
キーワード(英) | DLTS / I-V / platinum / reverse recovery time |
資料番号 | ED2007-60,SDM2007-65 |
発行日 |
研究会情報 | |
研究会 | ED |
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開催期間 | 2007/6/18(から1日開催) |
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テーマ(英) | |
委員長氏名(和) | |
委員長氏名(英) | |
副委員長氏名(和) | |
副委員長氏名(英) | |
幹事氏名(和) | |
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幹事補佐氏名(和) | |
幹事補佐氏名(英) |
講演論文情報詳細 | |
申込み研究会 | Electron Devices (ED) |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | Influence of Pt-Related Deep Traps Formed in Rectifier Junctions on High-Speed and Low-Leakage Properties |
サブタイトル(和) | |
キーワード(1)(和/英) | / DLTS |
第 1 著者 氏名(和/英) | / Hyung-Kee Seo |
第 1 著者 所属(和/英) | School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University |
発表年月日 | 2007/6/18 |
資料番号 | ED2007-60,SDM2007-65 |
巻番号(vol) | vol.107 |
号番号(no) | 110 |
ページ範囲 | pp.- |
ページ数 | 4 |
発行日 |