講演名 2007/6/18
Influence of Pt-Related Deep Traps Formed in Rectifier Junctions on High-Speed and Low-Leakage Properties
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抄録(和)
抄録(英) We have investigated the properties of platinum-related deep traps presenting three energy levels inside the silicon band gap. Capacitance transient measurements were performed for rectifying diodes made of Au and Ni for Schottky and Al/Ti for ohmic contacts. Their electrical properties were characterized by I-V and C-V measurements while varying junction temperature up to 200℃. From the experimental results, we found that both the minority carrier lifetime and the leakage current were closely related to the status of the traps presenting at E_c-0.52eV. The drive-in process parameters for platinum were observed to result in substantial changes in deep trap distribution and consequently electrical properties. The precisely controlled devices with Pt drove-in presented the turn on voltage of 1.1 V and reverse recovery time of 20ns. We elucidated the influence of Pt-related deep traps into the pn multi/planar junction structures in conjunction with high-speed and low-leakage properties.
キーワード(和)
キーワード(英) DLTS / I-V / platinum / reverse recovery time
資料番号 ED2007-60,SDM2007-65
発行日

研究会情報
研究会 ED
開催期間 2007/6/18(から1日開催)
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講演論文情報詳細
申込み研究会 Electron Devices (ED)
本文の言語 ENG
タイトル(和)
サブタイトル(和)
タイトル(英) Influence of Pt-Related Deep Traps Formed in Rectifier Junctions on High-Speed and Low-Leakage Properties
サブタイトル(和)
キーワード(1)(和/英) / DLTS
第 1 著者 氏名(和/英) / Hyung-Kee Seo
第 1 著者 所属(和/英)
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University
発表年月日 2007/6/18
資料番号 ED2007-60,SDM2007-65
巻番号(vol) vol.107
号番号(no) 110
ページ範囲 pp.-
ページ数 4
発行日