| Presentation | 2007/6/18 Influence of Pt-Related Deep Traps Formed in Rectifier Junctions on High-Speed and Low-Leakage Properties Hyung-Kee Seo, Byung-Guan Park, A-Ram Choi, Sang-Sik Choi, Kyu-Hwan Shim, Eun-Kyung Suh, Hoon Young Cho, Nam-Ju Kang, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated the properties of platinum-related deep traps presenting three energy levels inside the silicon band gap. Capacitance transient measurements were performed for rectifying diodes made of Au and Ni for Schottky and Al/Ti for ohmic contacts. Their electrical properties were characterized by I-V and C-V measurements while varying junction temperature up to 200℃. From the experimental results, we found that both the minority carrier lifetime and the leakage current were closely related to the status of the traps presenting at E_c-0.52eV. The drive-in process parameters for platinum were observed to result in substantial changes in deep trap distribution and consequently electrical properties. The precisely controlled devices with Pt drove-in presented the turn on voltage of 1.1 V and reverse recovery time of 20ns. We elucidated the influence of Pt-related deep traps into the pn multi/planar junction structures in conjunction with high-speed and low-leakage properties. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | DLTS / I-V / platinum / reverse recovery time |
| Paper # | ED2007-60,SDM2007-65 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Influence of Pt-Related Deep Traps Formed in Rectifier Junctions on High-Speed and Low-Leakage Properties |
| Sub Title (in English) | |
| Keyword(1) | DLTS |
| Keyword(2) | I-V |
| Keyword(3) | platinum |
| Keyword(4) | reverse recovery time |
| 1st Author's Name | Hyung-Kee Seo |
| 1st Author's Affiliation | School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University() |
| 2nd Author's Name | Byung-Guan Park |
| 2nd Author's Affiliation | School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University |
| 3rd Author's Name | A-Ram Choi |
| 3rd Author's Affiliation | School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University |
| 4th Author's Name | Sang-Sik Choi |
| 4th Author's Affiliation | School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University |
| 5th Author's Name | Kyu-Hwan Shim |
| 5th Author's Affiliation | School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University |
| 6th Author's Name | Eun-Kyung Suh |
| 6th Author's Affiliation | School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University |
| 7th Author's Name | Hoon Young Cho |
| 7th Author's Affiliation | Department of Physics, Dongguk University |
| 8th Author's Name | Nam-Ju Kang |
| 8th Author's Affiliation | AUK |
| Date | 2007/6/18 |
| Paper # | ED2007-60,SDM2007-65 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |