Presentation 2007/6/18
Investigation of mobility degradation in ultra-thin silicon-on-insulator by Hall effect measurements
Hironori Yoshioka, Tsunenobu Kimoto,
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Abstract(in English) MOSFETs using ultra-thin Silicon-On-Insulator (SOI) are a promising candidate of next generation LSIs. It has been reported, however, that the mobility in ultra-thin SOI decreases when the SOI thickness becomes smaller than about 10nm. In this study, electron and hole mobilities in thin SOI have been investigated by Hall effect measurements on a back-gated structure in the wide temperature range from 100K to 500K. The thickness of SOI has been changed from 107nm to 3.5nm by sacrificial oxidation. The mobility has shown significant decrease for SOI thickness smaller than 10nm, as reported. This mobility degradation is enhanced especially when the carrier concentration is low. Based on these Hall data, carrier scattering mechanism in ultra-thin SOI is discussed.
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Keyword(in English) Silicon / SOI / mobility / Hall effect / phonon scattering / Coulomb scattering / surface roughness scattering
Paper # ED2007-59,SDM2007-64
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Committee ED
Conference Date 2007/6/18(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Investigation of mobility degradation in ultra-thin silicon-on-insulator by Hall effect measurements
Sub Title (in English)
Keyword(1) Silicon
Keyword(2) SOI
Keyword(3) mobility
Keyword(4) Hall effect
Keyword(5) phonon scattering
Keyword(6) Coulomb scattering
Keyword(7) surface roughness scattering
1st Author's Name Hironori Yoshioka
1st Author's Affiliation Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University()
2nd Author's Name Tsunenobu Kimoto
2nd Author's Affiliation Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University
Date 2007/6/18
Paper # ED2007-59,SDM2007-64
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 6
Date of Issue