Presentation | 2007/6/18 Investigation of mobility degradation in ultra-thin silicon-on-insulator by Hall effect measurements Hironori Yoshioka, Tsunenobu Kimoto, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | MOSFETs using ultra-thin Silicon-On-Insulator (SOI) are a promising candidate of next generation LSIs. It has been reported, however, that the mobility in ultra-thin SOI decreases when the SOI thickness becomes smaller than about 10nm. In this study, electron and hole mobilities in thin SOI have been investigated by Hall effect measurements on a back-gated structure in the wide temperature range from 100K to 500K. The thickness of SOI has been changed from 107nm to 3.5nm by sacrificial oxidation. The mobility has shown significant decrease for SOI thickness smaller than 10nm, as reported. This mobility degradation is enhanced especially when the carrier concentration is low. Based on these Hall data, carrier scattering mechanism in ultra-thin SOI is discussed. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Silicon / SOI / mobility / Hall effect / phonon scattering / Coulomb scattering / surface roughness scattering |
Paper # | ED2007-59,SDM2007-64 |
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Conference Information | |
Committee | ED |
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Conference Date | 2007/6/18(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Investigation of mobility degradation in ultra-thin silicon-on-insulator by Hall effect measurements |
Sub Title (in English) | |
Keyword(1) | Silicon |
Keyword(2) | SOI |
Keyword(3) | mobility |
Keyword(4) | Hall effect |
Keyword(5) | phonon scattering |
Keyword(6) | Coulomb scattering |
Keyword(7) | surface roughness scattering |
1st Author's Name | Hironori Yoshioka |
1st Author's Affiliation | Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University() |
2nd Author's Name | Tsunenobu Kimoto |
2nd Author's Affiliation | Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University |
Date | 2007/6/18 |
Paper # | ED2007-59,SDM2007-64 |
Volume (vol) | vol.107 |
Number (no) | 110 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |