| Presentation | 2007/6/18 Low-Energy Deuterium Implantation for the Enhancement of Gate Oxide Reliability in MOSFETs Jae-Sung Lee, Seung-Woo Do, Yong-Hyun Lee, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper is focused on the new method to improve gate oxide reliability in MOSFET, which is related to deuterium incorporation. Low-energy implantation of D^+ ions was achieved at the back-end of process line (BEOL). The D^+ ions could reach near the gate oxide, SiO_2, region, and passivate some of traps or defects through the chemical bond with Si or O atom. Our result was also compared with that of the conventional H^+ passivation method. Device parameter variations as well as the gate leakage current depend on the degradation of gate oxide and are improved by our deuterium incorporation method. However, when the concentration of deuterium is redundant in gate oxide, excess traps are generated and degrades the performance. Our results suggest the new passivation process that gives enhanced device reliability, and can be implemented conveniently in the standard CMOS process. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Deuterium / Ion implantation / MOSFET / Gate oxide / Reliability / Defect |
| Paper # | ED2007-58,SDM2007-63 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-Energy Deuterium Implantation for the Enhancement of Gate Oxide Reliability in MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | Deuterium |
| Keyword(2) | Ion implantation |
| Keyword(3) | MOSFET |
| Keyword(4) | Gate oxide |
| Keyword(5) | Reliability |
| Keyword(6) | Defect |
| 1st Author's Name | Jae-Sung Lee |
| 1st Author's Affiliation | Division of Information & Communication Engineering, Uiduk University() |
| 2nd Author's Name | Seung-Woo Do |
| 2nd Author's Affiliation | School of Electrical Engineering and Computer Science, Kyungpook National University |
| 3rd Author's Name | Yong-Hyun Lee |
| 3rd Author's Affiliation | School of Electrical Engineering and Computer Science, Kyungpook National University |
| Date | 2007/6/18 |
| Paper # | ED2007-58,SDM2007-63 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |