Presentation 2007/6/18
Laser-induced Epitaxial Growth (LEG) Technology for High Density 3-D Stacked Memory with High Productivity
Yong-Hoon Son, Jong-Wook Lee, Pilkyu Kang, U-In Chung, Joo Tae Moon,
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Abstract(in English) LEG (Laser-induced Epitaxial Growth) process has been proposed to obtain the single c-Si layer over oxide and successfully demonstrated with cell-stacked high density SRAM. With LEG process, the energy density of laser beam and the seed formation are the key factors to determine the crystal quality of Si layer on oxide. CMOSFETs on Si film prepared by LEG process have excellent behaviors in terms of both performance and its variations. It is found that high density LEG SRAMs with stacked cell transistor have fully worked with the lowest stand-by current of less than 0.3uA/Mb to date. LEG process is believed to be a promising technology for providing the high quality Si channel layer to the stacked memory devices.
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Paper # ED2007-57,SDM2007-62
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Committee ED
Conference Date 2007/6/18(1days)
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Language ENG
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Title (in English) Laser-induced Epitaxial Growth (LEG) Technology for High Density 3-D Stacked Memory with High Productivity
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1st Author's Name Yong-Hoon Son
1st Author's Affiliation Process Development Team, Memory Division, Samsung Electronics Co., Ltd.()
2nd Author's Name Jong-Wook Lee
2nd Author's Affiliation Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
3rd Author's Name Pilkyu Kang
3rd Author's Affiliation Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
4th Author's Name U-In Chung
4th Author's Affiliation Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
5th Author's Name Joo Tae Moon
5th Author's Affiliation Process Development Team, Memory Division, Samsung Electronics Co., Ltd.
Date 2007/6/18
Paper # ED2007-57,SDM2007-62
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 2
Date of Issue