Presentation 2007/6/18
Selective Epitaxial Growth of SiGe Layers with High Aspect Ratio Mask of Dielectric Films
A-Ram Choi, Sang-Sik Choi, Byung-Guan Park, Dongwoo Suh, Gyungock Kim, Jin-Tae Kim, Jin-Soo Choi, Deok-Ho Cho, Tae-Hyun Han, Kyu-Hwan Shim,
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Abstract(in English) This paper presents the selective epitaxial growth(SEG) properties of reduced pressure chemical vapor deposition (RPCVD) at low temperatures of 675~725℃ with high aspect ratio mask of dielectric films. The SEG process has been investigated to understand the influence of loading effect, mask pattern shape and size dependency, and RPCVD process parameter effects. In order to overcome difficulties associated with high-aspect ratio, it is critical to understand the process pressure in the ranges of a few tens Torr showing intermediate regime of kinetic and molecular flows. SiGe epi layers designed with X_~0.2 and 10~100nm in thickness were adequate as an extrinsic base for self-aligned heterojunction bipolar transistors (HBTs) in order to reduce the parasitic resistance for the higher maximum oscillation frequencies. SEG of SiGe using RPCVD showed considerable advantages for the improvements of parasitic components and operation speed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SiGe / SEG / aspect ratio / RPCVD
Paper # ED2007-56,SDM2007-61
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Committee ED
Conference Date 2007/6/18(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Selective Epitaxial Growth of SiGe Layers with High Aspect Ratio Mask of Dielectric Films
Sub Title (in English)
Keyword(1) SiGe
Keyword(2) SEG
Keyword(3) aspect ratio
Keyword(4) RPCVD
1st Author's Name A-Ram Choi
1st Author's Affiliation School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University()
2nd Author's Name Sang-Sik Choi
2nd Author's Affiliation School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University
3rd Author's Name Byung-Guan Park
3rd Author's Affiliation School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University
4th Author's Name Dongwoo Suh
4th Author's Affiliation ETRI
5th Author's Name Gyungock Kim
5th Author's Affiliation ETRI
6th Author's Name Jin-Tae Kim
6th Author's Affiliation AUK
7th Author's Name Jin-Soo Choi
7th Author's Affiliation AUK
8th Author's Name Deok-Ho Cho
8th Author's Affiliation AUK
9th Author's Name Tae-Hyun Han
9th Author's Affiliation AUK
10th Author's Name Kyu-Hwan Shim
10th Author's Affiliation School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University
Date 2007/6/18
Paper # ED2007-56,SDM2007-61
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
Date of Issue