Presentation	2007/6/18 RF Characteristics for 70nm MOSFETs below 77K Seung-Ho Hong, Gil-Bok Choi, Rock-Hyun Back, Hee-Sung Kang, Sung-Woo Jung, Yoon-Ha Jeong,
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Abstract(in English)	The RF characteristics of 70nm MOSFETs were measured and analyzed below liquid nitrogen temperature. Significant improvements in DC and RF performance were observed at cryogenic temperature. The transconductance (g_m) has the peak point at 25K due to carrier freeze out effect. The cut-off frequency (f_T) and the maximum oscillation frequency (f_) increase over a temperature range of 4K to 77K as the temperature decreases. A simple small signal sub-circuit model was used to understand the dependence of device parameters with temperature. The improvement in the cut-off frequency below 25K is because the extrinsic capacitance is relatively small at 4K. Results show that the temperature dependence observed for the cut-off frequency and the maximum oscillation frequency is also valid below liquid nitrogen temperature.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Cutoff frequency / maximum oscillation frequency / low temperature / MOSFETs
Paper #	ED2007-55,SDM2007-60
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Conference Information
Committee	ED
Conference Date	2007/6/18(1days)
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Paper Information
Registration To	Electron Devices (ED)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	RF Characteristics for 70nm MOSFETs below 77K
Sub Title (in English)
Keyword(1)	Cutoff frequency
Keyword(2)	maximum oscillation frequency
Keyword(3)	low temperature
Keyword(4)	MOSFETs
1st Author's Name	Seung-Ho Hong
1st Author's Affiliation	Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology()
2nd Author's Name	Gil-Bok Choi
2nd Author's Affiliation	Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology
3rd Author's Name	Rock-Hyun Back
3rd Author's Affiliation	Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology
4th Author's Name	Hee-Sung Kang
4th Author's Affiliation	System LSI Division, Samsung Electronics Co., Ltd.
5th Author's Name	Sung-Woo Jung
5th Author's Affiliation	National Center for Nanomaterials Technology (NCNT)
6th Author's Name	Yoon-Ha Jeong
6th Author's Affiliation	Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology:National Center for Nanomaterials Technology (NCNT)
Date	2007/6/18
Paper #	ED2007-55,SDM2007-60
Volume (vol)	vol.107
Number (no)	110
Page	pp.pp.-
#Pages	4
Date of Issue