Presentation 2007/6/18
Quantum-Mechanical Effects in Nanometer Scale MuGFETs
Se Re Na Yun, Chong Gun Yu, Jong Tae Park, Jean Pierre Colinge,
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Abstract(in English) Solving the Poisson and Schrodinger equations self-consistently in two-dimensions reveals quantum-mechanical effects that influence the electron concentration, the threshold voltage and the drain current in MuGFETs. The average electron concentration needed to reach the threshold voltage depends on the gate configurations and the device geometry. The dependence of the energy of the lowest subband on the different gate configurations is studied, and the relation between threshold voltage and the lowest subband energy is investigated. The reduced drain current due to the dynamic threshold voltage effect has been analyzed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SOI technology / MuGFET / quantum-mechanical effects / energy subbands / silicon nanowires
Paper # ED2007-54,SDM2007-59
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Committee ED
Conference Date 2007/6/18(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Quantum-Mechanical Effects in Nanometer Scale MuGFETs
Sub Title (in English)
Keyword(1) SOI technology
Keyword(2) MuGFET
Keyword(3) quantum-mechanical effects
Keyword(4) energy subbands
Keyword(5) silicon nanowires
1st Author's Name Se Re Na Yun
1st Author's Affiliation Dept. of Electronics Engineering, University of Incheon()
2nd Author's Name Chong Gun Yu
2nd Author's Affiliation Dept. of Electronics Engineering, University of Incheon
3rd Author's Name Jong Tae Park
3rd Author's Affiliation Dept. of Electronics Engineering, University of Incheon
4th Author's Name Jean Pierre Colinge
4th Author's Affiliation Dept. of Electrical and Computer Engineering, University of California
Date 2007/6/18
Paper # ED2007-54,SDM2007-59
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
Date of Issue