| Presentation | 2007/6/18 Stress Effect Analysis for PD-SOI pMOSFETs with Undoped-Si_<0.88>Ge_<0.12> Heterostructure Channel Sang-Sik Choi, A-Ram Choi, Jae-Yeon Kim, Jeon-Wook Yang, Yong-Woo Hwang, Tae-Hyun Han, Deok Ho Cho, Kyu-Hwan Shim, |
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| PDF Download Page | PDF download Page Link | |
| Abstract(in Japanese) | (See Japanese page) | |
| Abstract(in English) | The stress effect of SiGe p-type metal oxide semiconductor field effect transistors(MOSFETs) has been investigated to compare property of devices made of the Si Bulk and the partially depleted silicon on insulator(PD SOI). The electrical properties in SiGe PD SOI presented enhancements in subthreshold slope and drain induced barrier lowering in comparison to SiGe bulk. Threshold voltage shift is monitored as a function of hot carrier stress time of both structures. Hot carrier induced device degradation is observed significant from I-V measurements at specified stress intervals. A comparison of the V_ | shift for the SiGe Bulk and the SiGe PD SOI devices clearly shows that the SiGe PD SOI is more immune from hot carriers than the SiGe Bulk. The 1/f noise increase was not serious after hot carrier stress as measured in saturation mode. It is concluded that the properties of SiGe PD SOI could be maintained stable in operation of hot carrier injection condition. |
| Keyword(in Japanese) | (See Japanese page) | |
| Keyword(in English) | SiGe / MOSFET / PD SOI / stress effect | |
| Paper # | ED2007-52,SDM2007-57 | |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Stress Effect Analysis for PD-SOI pMOSFETs with Undoped-Si_<0.88>Ge_<0.12> Heterostructure Channel |
| Sub Title (in English) | |
| Keyword(1) | SiGe |
| Keyword(2) | MOSFET |
| Keyword(3) | PD SOI |
| Keyword(4) | stress effect |
| 1st Author's Name | Sang-Sik Choi |
| 1st Author's Affiliation | School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University() |
| 2nd Author's Name | A-Ram Choi |
| 2nd Author's Affiliation | School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University |
| 3rd Author's Name | Jae-Yeon Kim |
| 3rd Author's Affiliation | School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University |
| 4th Author's Name | Jeon-Wook Yang |
| 4th Author's Affiliation | School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University |
| 5th Author's Name | Yong-Woo Hwang |
| 5th Author's Affiliation | Radio Frequency Devices Division, AUK |
| 6th Author's Name | Tae-Hyun Han |
| 6th Author's Affiliation | Radio Frequency Devices Division, AUK |
| 7th Author's Name | Deok Ho Cho |
| 7th Author's Affiliation | Radio Frequency Devices Division, AUK |
| 8th Author's Name | Kyu-Hwan Shim |
| 8th Author's Affiliation | School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University |
| Date | 2007/6/18 |
| Paper # | ED2007-52,SDM2007-57 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |