Presentation 2007/6/18
FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs
Hochul Lee, Youngchang Yoon, Hyungcheol Shin,
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Abstract(in English) As the gate area decreases to the order of a square micron, individual trapping events can be detected as fluctuations between discrete levels of the drain current, known as random telegraph signal (RTS) noise. In many circuit application areas such as CMOS Image sensor and flash memory are already suffering from RTS noise. Especially, in case of flash memory, FN stress causes threshold voltage shift problems due to generation of additional oxide traps, which degrades circuit performance. In this paper, we investigated how FN stress effects on RTS noise behavior in MOSFET and monitored it from the time domain and frequency domain.
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Keyword(in English) Random Telegraph Signal Noise / FN stress / flash memory / MOSFET
Paper # ED2007-49,SDM2007-54
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Committee ED
Conference Date 2007/6/18(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs
Sub Title (in English)
Keyword(1) Random Telegraph Signal Noise
Keyword(2) FN stress
Keyword(3) flash memory
Keyword(4) MOSFET
1st Author's Name Hochul Lee
1st Author's Affiliation Seoul National Univ. Dept. of EE()
2nd Author's Name Youngchang Yoon
2nd Author's Affiliation Seoul National Univ. Dept. of EE
3rd Author's Name Hyungcheol Shin
3rd Author's Affiliation Seoul National Univ. Dept. of EE
Date 2007/6/18
Paper # ED2007-49,SDM2007-54
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
Date of Issue