Presentation | 2007/6/18 FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs Hochul Lee, Youngchang Yoon, Hyungcheol Shin, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | As the gate area decreases to the order of a square micron, individual trapping events can be detected as fluctuations between discrete levels of the drain current, known as random telegraph signal (RTS) noise. In many circuit application areas such as CMOS Image sensor and flash memory are already suffering from RTS noise. Especially, in case of flash memory, FN stress causes threshold voltage shift problems due to generation of additional oxide traps, which degrades circuit performance. In this paper, we investigated how FN stress effects on RTS noise behavior in MOSFET and monitored it from the time domain and frequency domain. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Random Telegraph Signal Noise / FN stress / flash memory / MOSFET |
Paper # | ED2007-49,SDM2007-54 |
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Committee | ED |
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Conference Date | 2007/6/18(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs |
Sub Title (in English) | |
Keyword(1) | Random Telegraph Signal Noise |
Keyword(2) | FN stress |
Keyword(3) | flash memory |
Keyword(4) | MOSFET |
1st Author's Name | Hochul Lee |
1st Author's Affiliation | Seoul National Univ. Dept. of EE() |
2nd Author's Name | Youngchang Yoon |
2nd Author's Affiliation | Seoul National Univ. Dept. of EE |
3rd Author's Name | Hyungcheol Shin |
3rd Author's Affiliation | Seoul National Univ. Dept. of EE |
Date | 2007/6/18 |
Paper # | ED2007-49,SDM2007-54 |
Volume (vol) | vol.107 |
Number (no) | 110 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |