Presentation 2007/6/18
Robust Design of Transistors : Present Status and Measures to Characteristic Variations
Toshiro HIRAMOTO,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The variations in transistor characteristics rapidly increase as the transistor size is miniaturized. Although each transistor operates correctly, the margin of circuit operation is severely degraded or the circuit fails. The origin of the characteristic variations is not simple in the nanoscale regimes. The various elements causing fluctuations are complexly related and the quantitative total fluctuations have not been understood yet. In this presentation, the present status and measures to the characteristic variations are described, and the activities of "Robust Design of Transistors" Program of the MIRAI Project are also introduced.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Scaled CMOS / Threshold voltage variations / Random dopant fluctuations
Paper # ED2007-48,SDM2007-53
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Committee ED
Conference Date 2007/6/18(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Robust Design of Transistors : Present Status and Measures to Characteristic Variations
Sub Title (in English)
Keyword(1) Scaled CMOS
Keyword(2) Threshold voltage variations
Keyword(3) Random dopant fluctuations
1st Author's Name Toshiro HIRAMOTO
1st Author's Affiliation Institute of Industrial Science, University of Tokyo:MIRAI-Selete()
Date 2007/6/18
Paper # ED2007-48,SDM2007-53
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
Date of Issue