Presentation | 2007/6/18 Robust Design of Transistors : Present Status and Measures to Characteristic Variations Toshiro HIRAMOTO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The variations in transistor characteristics rapidly increase as the transistor size is miniaturized. Although each transistor operates correctly, the margin of circuit operation is severely degraded or the circuit fails. The origin of the characteristic variations is not simple in the nanoscale regimes. The various elements causing fluctuations are complexly related and the quantitative total fluctuations have not been understood yet. In this presentation, the present status and measures to the characteristic variations are described, and the activities of "Robust Design of Transistors" Program of the MIRAI Project are also introduced. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Scaled CMOS / Threshold voltage variations / Random dopant fluctuations |
Paper # | ED2007-48,SDM2007-53 |
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Conference Information | |
Committee | ED |
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Conference Date | 2007/6/18(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Robust Design of Transistors : Present Status and Measures to Characteristic Variations |
Sub Title (in English) | |
Keyword(1) | Scaled CMOS |
Keyword(2) | Threshold voltage variations |
Keyword(3) | Random dopant fluctuations |
1st Author's Name | Toshiro HIRAMOTO |
1st Author's Affiliation | Institute of Industrial Science, University of Tokyo:MIRAI-Selete() |
Date | 2007/6/18 |
Paper # | ED2007-48,SDM2007-53 |
Volume (vol) | vol.107 |
Number (no) | 110 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |