Presentation | 2007-06-08 Effect of Nitrogen Profile and Fluorine Incorporation on Negative-bias Temperature Instability of Ultrathin Plasma-nitrided SiON MOSFETs Masayuki Terai, Shinji Fujieda, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The effects of plasma nitridation and fluorine incorporation on the components of negative-bias temperature instability (NBTI) in p-type MOSFETs with plasma-nitrided SiON gates were investigated. To clarify these effects, NBTI-induced threshold-coltage shift was separated into two components: one for generation of traps at the SiON/Si-substrate interface and one for positive charges within the SiON bulk. It was found that the proportions of the interface and bulk components can be controlled with plasma-nitridation method: the bulk component was increased by RF-plasma nitridation, while the interface component was dominant in the case of ECR-plasma nitridation. Lowering the nitrogen concentration near the SiON/Si-substrate interface decreased the interface component. Lowering the nitrogen concentration near the poly-Si/SiON interface did not decrease NBTI, while it decreased positive oxide charges in the as-fabricated MOSFETs. Furthermore, it was demonstrated that the fluorine incorporation decreases the interface component in plasma-nitrided SiON gates, while it does not decrease the bulk component. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | CMOS / REMOTE PLASMA NITRIDATION / RPN / OXINITRIDE / SION / NBTI |
Paper # | SDM2007-40 |
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Committee | SDM |
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Conference Date | 2007/5/31(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Effect of Nitrogen Profile and Fluorine Incorporation on Negative-bias Temperature Instability of Ultrathin Plasma-nitrided SiON MOSFETs |
Sub Title (in English) | |
Keyword(1) | CMOS |
Keyword(2) | REMOTE PLASMA NITRIDATION |
Keyword(3) | RPN |
Keyword(4) | OXINITRIDE |
Keyword(5) | SION |
Keyword(6) | NBTI |
1st Author's Name | Masayuki Terai |
1st Author's Affiliation | Device Platforms Res. Lab., NEC Corporation() |
2nd Author's Name | Shinji Fujieda |
2nd Author's Affiliation | Device Platforms Res. Lab., NEC Corporation |
Date | 2007-06-08 |
Paper # | SDM2007-40 |
Volume (vol) | vol.107 |
Number (no) | 85 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |