講演名 | 2007/6/18 High Ruggedness Power MOSFET Design by a Source RTA Process , |
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抄録(和) | |
抄録(英) | Vertical double diffused Power MOSFETs require a specified breakdown voltage, low on resistance, high switching speed, and a large safe operation area. In addition, most of these applications require the MOSFETs can be switched on and off with an inductive load. Under this condition, the MOSFET must sustain a great deal of stress without causing destructive failure and this ability is called "ruggedness" of the device. However, we found the double diffused process will sacrifice its ruggedness performance owing to the large source area. In this study, double diffused-process was not applied in this device. We use the source RTA process and improve the device ruggedness. We also use the ISE simulator to simulate and compare the proposed and conventional structure as well as their doping profiles. It is shown that the source RTA structure can reduce the parasitic BJT effect effectively, and therefore, improving the device's avalanche energy capability, which is required for inductive load circuits. |
キーワード(和) | |
キーワード(英) | Power MOSFET / unclamped inductive load switching (UIS) / Ruggedness / RTA |
資料番号 | ED2007-125,SDM2007-130 |
発行日 |
研究会情報 | |
研究会 | SDM |
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開催期間 | 2007/6/18(から1日開催) |
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講演論文情報詳細 | |
申込み研究会 | Silicon Device and Materials (SDM) |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | High Ruggedness Power MOSFET Design by a Source RTA Process |
サブタイトル(和) | |
キーワード(1)(和/英) | / Power MOSFET |
第 1 著者 氏名(和/英) | / Feng-Tsun Chien |
第 1 著者 所属(和/英) | Dept. of Electronics Engineering, National Chiao Tung University |
発表年月日 | 2007/6/18 |
資料番号 | ED2007-125,SDM2007-130 |
巻番号(vol) | vol.107 |
号番号(no) | 111 |
ページ範囲 | pp.- |
ページ数 | 4 |
発行日 |