| Presentation | 2007/5/17 Numerical Study of Turnstile Operation by Multidot-Channel FET Hiroya IKEDA, Michiharu TABE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have numerically studied the single-charge transfer operation by two-dimensional (2D) random-multidot-channel field-effect transistors (FETs) using orthodox theory of the Coulomb blockade phenomenon. The randomness of the multidot structure is reflected in the gate capacitance (C_g) in the equivalent circuit, embodying the dot-size disorder of the realistic devices. It was found that "turnstile operation" meaning that individual electron is transferred one by one from the source to the drain with a cycle of an alternating gate voltage can be performed in both random and homogeneous 2D multidot-channel FETs. By increasing the C_g randomness, some devices show that the average gate and drain bias condition which allows the turnstile operation is more relaxed. Consequently, the random-mulidot-channel FET can work as a single-electron turnstile device. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Random-multidot-channel FET / Coulomb blockade phenomenon / Single-electron tunneling / Turnstile operation |
| Paper # | ED2007-30,CPM2007-29,SDM2007-30 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2007/5/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Numerical Study of Turnstile Operation by Multidot-Channel FET |
| Sub Title (in English) | |
| Keyword(1) | Random-multidot-channel FET |
| Keyword(2) | Coulomb blockade phenomenon |
| Keyword(3) | Single-electron tunneling |
| Keyword(4) | Turnstile operation |
| 1st Author's Name | Hiroya IKEDA |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | Michiharu TABE |
| 2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| Date | 2007/5/17 |
| Paper # | ED2007-30,CPM2007-29,SDM2007-30 |
| Volume (vol) | vol.107 |
| Number (no) | 56 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |