Presentation 2007/5/17
Growth of SiC film and carbon nano-structure by thermal deposition with hydrogen
Yasuhiro Ogawa, Yoshitaka Hashimoto, Atushi Nakamura, Akira Tanaka, Jiro Temmyo,
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Abstract(in English) Carbon nano-structure was prepared by thermal decompotision using amorphous SiC film. The SiC films were grown by Remote Plasma Enhanced Chemical Vapor Deposition(RPE-CVD) using HMDS. It was clear FT-IR absorption peak of Si-C bond is incresae at 750℃ and 0.07Torr. Carbon nano-structure was prepared by thermal decompotision using amorphous SiC film by RPE-CVD,and graphite was prepared.Prepared graphite was decreased by rising substrate temperature and flowing hydorogen at theramal decomposition.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) RPE-CVD / SiC / Thermal Decompotsition on SiC / graphite
Paper # ED2007-28,CPM2007-27,SDM2007-28
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Conference Information
Committee SDM
Conference Date 2007/5/17(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of SiC film and carbon nano-structure by thermal deposition with hydrogen
Sub Title (in English)
Keyword(1) RPE-CVD
Keyword(2) SiC
Keyword(3) Thermal Decompotsition on SiC
Keyword(4) graphite
1st Author's Name Yasuhiro Ogawa
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Yoshitaka Hashimoto
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Atushi Nakamura
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Akira Tanaka
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
5th Author's Name Jiro Temmyo
5th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2007/5/17
Paper # ED2007-28,CPM2007-27,SDM2007-28
Volume (vol) vol.107
Number (no) 56
Page pp.pp.-
#Pages 6
Date of Issue