| Presentation | 2007/5/17 Single-electron-tunneling characteristics of SOI-MOSFETs with ultra thin Si layer doped Phosphorus Daisuke NAGATA, Kazuhito EBISAWA, Daniel Moraru, Michiharu TABE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated ultrathin SOI-MOSFETs doped with phosphorus and measured their electrical characteristics. We observed large coulomb blockade oscillations when the device size is decreased and P-dopant density is increased. Furthermore, we also observed different peak ratio of coulomb blockade oscillation for two devices with same channel size but difference doping density. These results indicate that P dopants play an important role on the formation of multiple tunnel junctions. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | coulomb blockade / dopant potential / random multiple tunnel junctions / single-electron transfer |
| Paper # | ED2007-24,CPM2007-23,SDM2007-24 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2007/5/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Single-electron-tunneling characteristics of SOI-MOSFETs with ultra thin Si layer doped Phosphorus |
| Sub Title (in English) | |
| Keyword(1) | coulomb blockade |
| Keyword(2) | dopant potential |
| Keyword(3) | random multiple tunnel junctions |
| Keyword(4) | single-electron transfer |
| 1st Author's Name | Daisuke NAGATA |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | Kazuhito EBISAWA |
| 2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 3rd Author's Name | Daniel Moraru |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | Michiharu TABE |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| Date | 2007/5/17 |
| Paper # | ED2007-24,CPM2007-23,SDM2007-24 |
| Volume (vol) | vol.107 |
| Number (no) | 56 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |