Presentation | 2007/5/17 ZnO thin layers growen by sideflow PRE-MOCVD Masahiko ADACHI, Tsuyoshi AOSHIMA, Atsushi NAKAMURA, Jiro TEMMYO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | ZnO layers growth on a-plane sapphire(11-20)substrates by sideflow remote plasma enhanced MOCVD (RPE-MOCVD) was studied. The relation between thickness distribution and growth mode was noticed. We successfully controlled growth from thin layers to nanostructures, by varying growth temperature, pressure and VI/II ratio. The growth temperature dependency of an optical property of the ZnO thin layers was characterized by photoluminescence measurement. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | sideflow reaction chamber / remote plasma enhanced MOCVD / nanorods / nanowires |
Paper # | ED2007-21,CPM2007-20,SDM2007-21 |
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Committee | SDM |
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Conference Date | 2007/5/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | ZnO thin layers growen by sideflow PRE-MOCVD |
Sub Title (in English) | |
Keyword(1) | sideflow reaction chamber |
Keyword(2) | remote plasma enhanced MOCVD |
Keyword(3) | nanorods |
Keyword(4) | nanowires |
1st Author's Name | Masahiko ADACHI |
1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
2nd Author's Name | Tsuyoshi AOSHIMA |
2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
3rd Author's Name | Atsushi NAKAMURA |
3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
4th Author's Name | Jiro TEMMYO |
4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
Date | 2007/5/17 |
Paper # | ED2007-21,CPM2007-20,SDM2007-21 |
Volume (vol) | vol.107 |
Number (no) | 56 |
Page | pp.pp.- |
#Pages | 5 |
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