Presentation | 2007/5/17 Characterization of plasma etching effects on GaN by electrical measurements of Schottky diodes Masashi KATO, Kazuki MIKAMO, Masaya ICHIMURA, Masakazu KANECHIKA, Osamu ISHIGURO, Tetsu KACHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power devices, formation of p-type layer and plasma etching process are essential. In this work, we characterize plasma etching effects to p-type GaN using Schottky diodes. We employed current-voltage, capacitance-voltage, deep level transient spectroscopy and photocapacitance measurements. As a result, we observed a deep level located at Ec-0.25 eV in both n-type and p-type GaN. It is considered that this level corresponds to a deep level introduced by nitrogen vacancy and low-power plasma etching is effective to reduce introduction of this level. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / plasma etching / Schottky diode / DLTS / photocapacitance |
Paper # | ED2007-23,CPM2007-22,SDM2007-23 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2007/5/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Characterization of plasma etching effects on GaN by electrical measurements of Schottky diodes |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | plasma etching |
Keyword(3) | Schottky diode |
Keyword(4) | DLTS |
Keyword(5) | photocapacitance |
1st Author's Name | Masashi KATO |
1st Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology() |
2nd Author's Name | Kazuki MIKAMO |
2nd Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology |
3rd Author's Name | Masaya ICHIMURA |
3rd Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology |
4th Author's Name | Masakazu KANECHIKA |
4th Author's Affiliation | Toyota Central R&D Laboratories., Inc. |
5th Author's Name | Osamu ISHIGURO |
5th Author's Affiliation | Toyota Central R&D Laboratories., Inc. |
6th Author's Name | Tetsu KACHI |
6th Author's Affiliation | Toyota Central R&D Laboratories., Inc. |
Date | 2007/5/17 |
Paper # | ED2007-23,CPM2007-22,SDM2007-23 |
Volume (vol) | vol.107 |
Number (no) | 55 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |