Presentation 2007/5/17
Epitaxial Growth of CuInSe_2 Thin Films by Flash Evaporation
Akinori ITO, Wataru HIRAOKA, Takahiro TAKAHASHI, Yoshinori EMA,
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Abstract(in English) The conditions for epitaxial growth of CuInSe_2 thin films on GaAs(100) substrate have been investigated. Samples were prepared at 420℃ substrate temperature by feeding ~300ng CuInSe_2 alloy chunks periodically. Best epitaxial film was obtained by feeding chunks for the deposition rate of ~3Å/sec. Excess feeding made a (112)-oriented CuInSe_2 film.
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Keyword(in English) CuInSe_2 / GaAs / flash evaporation / chalcopyrite-type / epitaxial growth
Paper # ED2007-22,CPM2007-21,SDM2007-22
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Committee CPM
Conference Date 2007/5/17(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Epitaxial Growth of CuInSe_2 Thin Films by Flash Evaporation
Sub Title (in English)
Keyword(1) CuInSe_2
Keyword(2) GaAs
Keyword(3) flash evaporation
Keyword(4) chalcopyrite-type
Keyword(5) epitaxial growth
1st Author's Name Akinori ITO
1st Author's Affiliation Graduate School of Science and Engineering, Shizuoka University()
2nd Author's Name Wataru HIRAOKA
2nd Author's Affiliation Department of Electrical and Electronic Engineering, Shizuoka University
3rd Author's Name Takahiro TAKAHASHI
3rd Author's Affiliation Department of Electrical and Electronic Engineering, Shizuoka University
4th Author's Name Yoshinori EMA
4th Author's Affiliation Department of Electrical and Electronic Engineering, Shizuoka University
Date 2007/5/17
Paper # ED2007-22,CPM2007-21,SDM2007-22
Volume (vol) vol.107
Number (no) 55
Page pp.pp.-
#Pages 4
Date of Issue