Presentation 2007/5/17
ZnO thin layers growen by sideflow PRE-MOCVD
Masahiko ADACHI, Tsuyoshi AOSHIMA, Atsushi NAKAMURA, Jiro TEMMYO,
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Abstract(in English) ZnO layers growth on a-plane sapphire(11-20)substrates by sideflow remote plasma enhanced MOCVD (RPE-MOCVD) was studied. The relation between thickness distribution and growth mode was noticed. We successfully controlled growth from thin layers to nanostructures, by varying growth temperature, pressure and VI/II ratio. The growth temperature dependency of an optical property of the ZnO thin layers was characterized by photoluminescence measurement.
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Keyword(in English) sideflow reaction chamber / remote plasma enhanced MOCVD / nanorods / nanowires
Paper # ED2007-21,CPM2007-20,SDM2007-21
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Committee CPM
Conference Date 2007/5/17(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) ZnO thin layers growen by sideflow PRE-MOCVD
Sub Title (in English)
Keyword(1) sideflow reaction chamber
Keyword(2) remote plasma enhanced MOCVD
Keyword(3) nanorods
Keyword(4) nanowires
1st Author's Name Masahiko ADACHI
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Tsuyoshi AOSHIMA
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Atsushi NAKAMURA
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Jiro TEMMYO
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2007/5/17
Paper # ED2007-21,CPM2007-20,SDM2007-21
Volume (vol) vol.107
Number (no) 55
Page pp.pp.-
#Pages 5
Date of Issue