Presentation | 2007/5/17 Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier measurements Keisuke Fukushima, Masashi Kato, Masaya Ichimura, Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Gallium (GaN) is promising for high power and high frequency devices, and the etching processes is necessary in bipolar device fabrication. Inductively coupled plasma (ICP) etching is one of the plasma etching techniques which also forms a damage layer on the sample surface. In this work, we have measured the excess carrier lifetime in ICP etched GaN with the microwave photoconductivity decay (μ-PCD) method. We analyzed levels introduced by ICP etching by measuring temperature dependence of the decay curves. We annealed ICP etched GaN, and discussed effects of annealing on the etching damage by observing the change of the excess carrier lifetime. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Gallium nitride / carrier lifetime / μ-PCD method / ICP / decay curve / temperature dependence / annealing |
Paper # | ED2007-13,CPM2007-12,SDM2007-13 |
Date of Issue |
Conference Information | |
Committee | CPM |
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Conference Date | 2007/5/17(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier measurements |
Sub Title (in English) | |
Keyword(1) | Gallium nitride |
Keyword(2) | carrier lifetime |
Keyword(3) | μ-PCD method |
Keyword(4) | ICP |
Keyword(5) | decay curve |
Keyword(6) | temperature dependence |
Keyword(7) | annealing |
1st Author's Name | Keisuke Fukushima |
1st Author's Affiliation | Nagoya institute of technology() |
2nd Author's Name | Masashi Kato |
2nd Author's Affiliation | Nagoya institute of technology |
3rd Author's Name | Masaya Ichimura |
3rd Author's Affiliation | Nagoya institute of technology |
4th Author's Name | Masakazu Kanechika |
4th Author's Affiliation | Toyota Central Labs.,Inc. |
5th Author's Name | Osamu Ishiguro |
5th Author's Affiliation | Toyota Central Labs.,Inc. |
6th Author's Name | Tetsu Kachi |
6th Author's Affiliation | Toyota Central Labs.,Inc. |
Date | 2007/5/17 |
Paper # | ED2007-13,CPM2007-12,SDM2007-13 |
Volume (vol) | vol.107 |
Number (no) | 55 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |