Presentation | 2007-05-18 Potential Fluctuation and its Origin in Crystalline Domain of Pentacene Thin-Film Transistors Noboru Ohashi, Hiroshi Tomii, Ryousuke Matsubara, Masakazu Nakamura, Masatoshi Sakai, Kazuhiro Kudo, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Surface topography and potential distribution of a thin-film transistor (TFT) with a poly-crystalline pentacene active layer have been measured using atomic-force-microscope potentiometry. Flat areas showing molecular terraces were identified from the topographic images, and potential fluctuation independent of topographic features was found for the first time in the flat areas. This implies the existence of channel-conductance fluctuation even in a crystalline domain in a pentacene TFT. A considerable origin of the potential fluctuation was concluded to be fluctuation of the top level of valence band, which results in the variation of local carrier concentration. The full width at half maximum of the band fluctuation was estimated to be 12 meV. This might reduce the mean carrier drift velocity in crystalline domains. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Pentacene / Thin Film Transistor (TFT) / Atomic Force Microscope Potentiometry / Effective Mass / Band Fluctuation |
Paper # | OME2007-10 |
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Conference Information | |
Committee | OME |
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Conference Date | 2007/5/11(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Potential Fluctuation and its Origin in Crystalline Domain of Pentacene Thin-Film Transistors |
Sub Title (in English) | |
Keyword(1) | Pentacene |
Keyword(2) | Thin Film Transistor (TFT) |
Keyword(3) | Atomic Force Microscope Potentiometry |
Keyword(4) | Effective Mass |
Keyword(5) | Band Fluctuation |
1st Author's Name | Noboru Ohashi |
1st Author's Affiliation | Department of Electronics and Mechanical Engineering, Faculty of Engineering, Chiba University() |
2nd Author's Name | Hiroshi Tomii |
2nd Author's Affiliation | Department of Electronics and Mechanical Engineering, Faculty of Engineering, Chiba University |
3rd Author's Name | Ryousuke Matsubara |
3rd Author's Affiliation | Department of Electronics and Mechanical Engineering, Faculty of Engineering, Chiba University |
4th Author's Name | Masakazu Nakamura |
4th Author's Affiliation | Department of Electronics and Mechanical Engineering, Faculty of Engineering, Chiba University |
5th Author's Name | Masatoshi Sakai |
5th Author's Affiliation | Department of Electronics and Mechanical Engineering, Faculty of Engineering, Chiba University |
6th Author's Name | Kazuhiro Kudo |
6th Author's Affiliation | Department of Electronics and Mechanical Engineering, Faculty of Engineering, Chiba University |
Date | 2007-05-18 |
Paper # | OME2007-10 |
Volume (vol) | vol.107 |
Number (no) | 47 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |