Presentation 2007-05-18
Potential Fluctuation and its Origin in Crystalline Domain of Pentacene Thin-Film Transistors
Noboru Ohashi, Hiroshi Tomii, Ryousuke Matsubara, Masakazu Nakamura, Masatoshi Sakai, Kazuhiro Kudo,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Surface topography and potential distribution of a thin-film transistor (TFT) with a poly-crystalline pentacene active layer have been measured using atomic-force-microscope potentiometry. Flat areas showing molecular terraces were identified from the topographic images, and potential fluctuation independent of topographic features was found for the first time in the flat areas. This implies the existence of channel-conductance fluctuation even in a crystalline domain in a pentacene TFT. A considerable origin of the potential fluctuation was concluded to be fluctuation of the top level of valence band, which results in the variation of local carrier concentration. The full width at half maximum of the band fluctuation was estimated to be 12 meV. This might reduce the mean carrier drift velocity in crystalline domains.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Pentacene / Thin Film Transistor (TFT) / Atomic Force Microscope Potentiometry / Effective Mass / Band Fluctuation
Paper # OME2007-10
Date of Issue

Conference Information
Committee OME
Conference Date 2007/5/11(1days)
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Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Potential Fluctuation and its Origin in Crystalline Domain of Pentacene Thin-Film Transistors
Sub Title (in English)
Keyword(1) Pentacene
Keyword(2) Thin Film Transistor (TFT)
Keyword(3) Atomic Force Microscope Potentiometry
Keyword(4) Effective Mass
Keyword(5) Band Fluctuation
1st Author's Name Noboru Ohashi
1st Author's Affiliation Department of Electronics and Mechanical Engineering, Faculty of Engineering, Chiba University()
2nd Author's Name Hiroshi Tomii
2nd Author's Affiliation Department of Electronics and Mechanical Engineering, Faculty of Engineering, Chiba University
3rd Author's Name Ryousuke Matsubara
3rd Author's Affiliation Department of Electronics and Mechanical Engineering, Faculty of Engineering, Chiba University
4th Author's Name Masakazu Nakamura
4th Author's Affiliation Department of Electronics and Mechanical Engineering, Faculty of Engineering, Chiba University
5th Author's Name Masatoshi Sakai
5th Author's Affiliation Department of Electronics and Mechanical Engineering, Faculty of Engineering, Chiba University
6th Author's Name Kazuhiro Kudo
6th Author's Affiliation Department of Electronics and Mechanical Engineering, Faculty of Engineering, Chiba University
Date 2007-05-18
Paper # OME2007-10
Volume (vol) vol.107
Number (no) 47
Page pp.pp.-
#Pages 5
Date of Issue