Presentation 2007-05-25
Fabrication of Si Photonic Wire Waveguide by Selective Oxidation of Si
Koichi IIYAMA, Satoshi ASAI, Masahiro WAKASHIMA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Si photonic wire waveguides are fabricated by selective oxidation of Si. A SOI wafer on which a 3 μm-wide Si_3N_4 film is formed is oxidized. The Si under the Si_3N_4 film is not oxidized and works as a core, and the Si without the Si_3N_4 film is oxidized and works as a clad. The roughness at the core/clad interface is smoothed while the oxidation process, and then the propagation loss is reduced. The resultant waveguide is multimode, and the propagation loss is decreased by 4 dB as compared to the conventional fabrication process.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Optical waveguide / Si photonic wire waveguide / Selective oxidation / Propagation loss
Paper # LQE2007-15
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Conference Information
Committee LQE
Conference Date 2007/5/18(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of Si Photonic Wire Waveguide by Selective Oxidation of Si
Sub Title (in English)
Keyword(1) Optical waveguide
Keyword(2) Si photonic wire waveguide
Keyword(3) Selective oxidation
Keyword(4) Propagation loss
1st Author's Name Koichi IIYAMA
1st Author's Affiliation Graduate School of Natural Science & Technology, Kanazawa Univserity()
2nd Author's Name Satoshi ASAI
2nd Author's Affiliation Graduate School of Natural Science & Technology, Kanazawa Univserity
3rd Author's Name Masahiro WAKASHIMA
3rd Author's Affiliation Faculty of Engineering, Kanazawa Univserity
Date 2007-05-25
Paper # LQE2007-15
Volume (vol) vol.107
Number (no) 71
Page pp.pp.-
#Pages 4
Date of Issue