Presentation 2007/2/22
Developing History of Power Devices toward IGBTs : The Progress of Power Device Operation Models in the Past Thirty Years
Ikunori Takata,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The author would like to introduce the developing history of the operation models of power devices in the past thirty years on his individual point of view. It had taken 10, 20 and 30 years for him to understand the transistor (BJT), the thyristor and the pin-diode respectively. Even now, he is incomprehensible on mechanisms of the avalanche breakdown and the recombination/generation of carriers. Nevertheless, other resolved mechanisms were very simple and each difficulty had been caused by the lack of a suitable model. Today's incomprehensible problems, such destructions that are caused by the cosmic-ray or recovery operations, might be understood by finding a new adequate physical model, the author supposes.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Power Devices / Device Models / pin Diode / Bipolar Transistor / Thyristor / IGBT
Paper # ED2006-263
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Committee ED
Conference Date 2007/2/22(1days)
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Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Developing History of Power Devices toward IGBTs : The Progress of Power Device Operation Models in the Past Thirty Years
Sub Title (in English)
Keyword(1) Power Devices
Keyword(2) Device Models
Keyword(3) pin Diode
Keyword(4) Bipolar Transistor
Keyword(5) Thyristor
Keyword(6) IGBT
1st Author's Name Ikunori Takata
1st Author's Affiliation Advanced Technology R&D Center. Mitsubishi Electric Corporation()
Date 2007/2/22
Paper # ED2006-263
Volume (vol) vol.106
Number (no) 544
Page pp.pp.-
#Pages 6
Date of Issue