| Presentation | 2007/2/22 Continuous Advancing Low-voltage Silicon Power Devices Satoshi MATSUMOTO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recently, Si low-voltage power devices breaking the theoretical limit of on-resistance which is considered by conventional device structure have been appearing and their performance have been improved every year by fine fabrication process and introducing the novel device structures. In this paper, the trends of the Si low voltage power devices are described. In addition, the future trends of them are also described based on trend of the power decives for RF front-applications. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | switching device / RF-power amplifier / Si / SiGe / SOI / Power-MOSFET / HBT / DMOSFET / trench-MOSFET / Super-junction |
| Paper # | ED2006-258 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/2/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Continuous Advancing Low-voltage Silicon Power Devices |
| Sub Title (in English) | |
| Keyword(1) | switching device |
| Keyword(2) | RF-power amplifier |
| Keyword(3) | Si |
| Keyword(4) | SiGe |
| Keyword(5) | SOI |
| Keyword(6) | Power-MOSFET |
| Keyword(7) | HBT |
| Keyword(8) | DMOSFET |
| Keyword(9) | trench-MOSFET |
| Keyword(10) | Super-junction |
| 1st Author's Name | Satoshi MATSUMOTO |
| 1st Author's Affiliation | NTT Energy and Environment Systems Laboratories() |
| Date | 2007/2/22 |
| Paper # | ED2006-258 |
| Volume (vol) | vol.106 |
| Number (no) | 544 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |