| Presentation | 2007-04-12 Device Technology for embedded DRAM utilizing stacked MIM(Metal-Insulator-Metal) Capacitor T. Tanigawa, Y. Yamagata, H. Shirai, H. Sugimura, T. Wake, K. Inoue, T. Sakoh, M. Sakao, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper presents embedded DRAM device technology utilizing stacked MIM(Metal-Insulator-Metal) capacitor. Targeted for high random-access performance as well as low-power data-streaming applications, original structure named "Full Metal DRAM" has been devised and implemented from 150nm generation. This features reduced parasitic resistance of DRAM cell and fully-compatible CMOS Trs. characteristics with that of leading-edge CMOS. In 90nm generation, ZrO2 is introduced as capacitor dielectric material for cell size reduction. For the next generation of 55nm, high-k gate dielectric(HfSiON) will be introduced in CMOS platform, which can be effectively exploited for embedded DRAM scaling and performance improvement. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | embedded DRAM / MIM Capacitor / High-k / ZrO2 / HfSiON |
| Paper # | ICD2007-4 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2007/4/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Device Technology for embedded DRAM utilizing stacked MIM(Metal-Insulator-Metal) Capacitor |
| Sub Title (in English) | |
| Keyword(1) | embedded DRAM |
| Keyword(2) | MIM Capacitor |
| Keyword(3) | High-k |
| Keyword(4) | ZrO2 |
| Keyword(5) | HfSiON |
| 1st Author's Name | T. Tanigawa |
| 1st Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation() |
| 2nd Author's Name | Y. Yamagata |
| 2nd Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| 3rd Author's Name | H. Shirai |
| 3rd Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| 4th Author's Name | H. Sugimura |
| 4th Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| 5th Author's Name | T. Wake |
| 5th Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| 6th Author's Name | K. Inoue |
| 6th Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| 7th Author's Name | T. Sakoh |
| 7th Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| 8th Author's Name | M. Sakao |
| 8th Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| Date | 2007-04-12 |
| Paper # | ICD2007-4 |
| Volume (vol) | vol.107 |
| Number (no) | 1 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |