Presentation 2007-03-06
A Study on Thermal Conduction and Distribution in SiC-SBD Package
Tsuyoshi FUNAKI, Akira NISHIO, Takashi HIKIHARA,
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Abstract(in English) Electrical characeristics of semiconductor devices vary with temperature. Thermal influence becomes more important for SiC devices, because it is expected to operate under wide temperature range. Heat generation by conduction loss and switching loss in power devices changes due to operating conditions. Therefore, it is inevitable to take the temperature dependency of characteristics of devices into account for the design of power conversion circuit. This paper models and analyzes heat conduction in SiC-SBD package with respect to current flow in electrical circuit. On the model we discuss the tenperature distribution with comparison to experimental results.
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Keyword(in English) SiC-SBD / heat conduction / thermal circuit / circuit simulator
Paper # CAS2006-98,SIP2006-199,CS2006-115
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Committee SIP
Conference Date 2007/2/27(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Study on Thermal Conduction and Distribution in SiC-SBD Package
Sub Title (in English)
Keyword(1) SiC-SBD
Keyword(2) heat conduction
Keyword(3) thermal circuit
Keyword(4) circuit simulator
1st Author's Name Tsuyoshi FUNAKI
1st Author's Affiliation Department of Electrical Engineering, Kyoto University()
2nd Author's Name Akira NISHIO
2nd Author's Affiliation Department of Electrical Engineering, Kyoto University
3rd Author's Name Takashi HIKIHARA
3rd Author's Affiliation Department of Electrical Engineering, Kyoto University
Date 2007-03-06
Paper # CAS2006-98,SIP2006-199,CS2006-115
Volume (vol) vol.106
Number (no) 570
Page pp.pp.-
#Pages 5
Date of Issue