| Presentation | 2007-02-02 Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate Zainal BURHANUDIN, Ratno NURYADI, Michiharu TARE, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We demonstrate the single-charge sensitivity of single-hole-tunneling (SHT) transistors fabricated on Si-on-insulator (SOI) wafer with p/p^+-Si substrate. As a function of time, the current of the SHT transistor is modulated (1) in dark condition by the successive emission of holes from acceptor levels in the p-Si layer and (2) under light illumination by the storage of photo-excited electrons at the p-Si/SiO_2 interface. In dark condition, the SHT current showed step-like features that could be due to the ionization of single-acceptors. At an appropriate photon incident rate, we believe that the detection of photo-excited single-electron in the substrate could also be realized. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Single-hole-tunneling transistor / single-photon detector / single-acceptor ion. |
| Paper # | ED2006-256,SDM2006-244 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2007/1/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate |
| Sub Title (in English) | |
| Keyword(1) | Single-hole-tunneling transistor |
| Keyword(2) | single-photon detector |
| Keyword(3) | single-acceptor ion. |
| 1st Author's Name | Zainal BURHANUDIN |
| 1st Author's Affiliation | Research Institue of Electronics, Shizuoka University() |
| 2nd Author's Name | Ratno NURYADI |
| 2nd Author's Affiliation | Research Institue of Electronics, Shizuoka University |
| 3rd Author's Name | Michiharu TARE |
| 3rd Author's Affiliation | Research Institue of Electronics, Shizuoka University |
| Date | 2007-02-02 |
| Paper # | ED2006-256,SDM2006-244 |
| Volume (vol) | vol.106 |
| Number (no) | 520 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |