Presentation 2007-02-02
Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands
Kensaku Ohkura, Tetsuya Kitade, Anri Nakajima,
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Abstract(in English) Single-electron transistors (SETs) are promising candidates for use as basic elements of future low-power integrated circuits. The use of Si for their construction is important because Si's compatibility with conventional fabrication techniques for large-scale integrated devices. We fabricated Si SETs with three islands, in which the cotunneling current was expected to be suppressed. The valley current of the obtained Coulomb oscillation was systematically investigated in comparison with the cotunneling theory. The temperature dependence of the valley current was well described by the inelastic cotunneling theory above 40 K in the low drain voltage region. Since the inelastic cotunneling current was confirmed to be dominant in the high temperature region and was exponentially suppressed by multiplexing islands, SETs with multiple islands is promising for the practical application such as reliable circuit operations.
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Keyword(in English) Single-electron transistor / SET / Si / Coulomb oscillation / Coulomb blockade / cotunneling / multiple islands
Paper # ED2006-254,SDM2006-242
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Committee ED
Conference Date 2007/1/25(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands
Sub Title (in English)
Keyword(1) Single-electron transistor
Keyword(2) SET
Keyword(3) Si
Keyword(4) Coulomb oscillation
Keyword(5) Coulomb blockade
Keyword(6) cotunneling
Keyword(7) multiple islands
1st Author's Name Kensaku Ohkura
1st Author's Affiliation Research Center for Nanodevices and Systems, Hiroshima University()
2nd Author's Name Tetsuya Kitade
2nd Author's Affiliation Research Center for Nanodevices and Systems, Hiroshima University
3rd Author's Name Anri Nakajima
3rd Author's Affiliation Research Center for Nanodevices and Systems, Hiroshima University
Date 2007-02-02
Paper # ED2006-254,SDM2006-242
Volume (vol) vol.106
Number (no) 520
Page pp.pp.-
#Pages 4
Date of Issue