Presentation | 2007-02-02 Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands Kensaku Ohkura, Tetsuya Kitade, Anri Nakajima, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Single-electron transistors (SETs) are promising candidates for use as basic elements of future low-power integrated circuits. The use of Si for their construction is important because Si's compatibility with conventional fabrication techniques for large-scale integrated devices. We fabricated Si SETs with three islands, in which the cotunneling current was expected to be suppressed. The valley current of the obtained Coulomb oscillation was systematically investigated in comparison with the cotunneling theory. The temperature dependence of the valley current was well described by the inelastic cotunneling theory above 40 K in the low drain voltage region. Since the inelastic cotunneling current was confirmed to be dominant in the high temperature region and was exponentially suppressed by multiplexing islands, SETs with multiple islands is promising for the practical application such as reliable circuit operations. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Single-electron transistor / SET / Si / Coulomb oscillation / Coulomb blockade / cotunneling / multiple islands |
Paper # | ED2006-254,SDM2006-242 |
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Conference Information | |
Committee | ED |
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Conference Date | 2007/1/25(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands |
Sub Title (in English) | |
Keyword(1) | Single-electron transistor |
Keyword(2) | SET |
Keyword(3) | Si |
Keyword(4) | Coulomb oscillation |
Keyword(5) | Coulomb blockade |
Keyword(6) | cotunneling |
Keyword(7) | multiple islands |
1st Author's Name | Kensaku Ohkura |
1st Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University() |
2nd Author's Name | Tetsuya Kitade |
2nd Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University |
3rd Author's Name | Anri Nakajima |
3rd Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University |
Date | 2007-02-02 |
Paper # | ED2006-254,SDM2006-242 |
Volume (vol) | vol.106 |
Number (no) | 520 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |