| Presentation | 2007-02-02 Fabrication and Characterization of Three-GaAs Nanowire-Junction Devices Controlled by Schottky Wrap Gates Tatsuya NAKAMURA, Seiya KASAI, Yuta SHIRATORI, Tamotsu HASHIZUME, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A three-terminal nanowire junction device controlled by double nanometer-sized Schottky wrap gates (WPGs), which control left and right branches independently, is fabricated utilizing AlGaAs/GaAs etched nanowires and characterized experimentally. Fabricated device exhibits clear nonlinear characteristics of output voltage at the center terminal by applying voltages to left and right terminals in push-pull fashion. Applying asymmetric gate voltages to left and right WPGs provide clear asymmetry in the output voltage. The nonlinearity in the ballistic transport domain is greatly enhanced by squeezing both left and right branches using WPGs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | three-terminal junctions / Schottky wrap gate (WPG) / GaAs / nanowire / ballistic transport |
| Paper # | ED2006-253,SDM2006-241 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/1/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and Characterization of Three-GaAs Nanowire-Junction Devices Controlled by Schottky Wrap Gates |
| Sub Title (in English) | |
| Keyword(1) | three-terminal junctions |
| Keyword(2) | Schottky wrap gate (WPG) |
| Keyword(3) | GaAs |
| Keyword(4) | nanowire |
| Keyword(5) | ballistic transport |
| 1st Author's Name | Tatsuya NAKAMURA |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University() |
| 2nd Author's Name | Seiya KASAI |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| 3rd Author's Name | Yuta SHIRATORI |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| 4th Author's Name | Tamotsu HASHIZUME |
| 4th Author's Affiliation | Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University |
| Date | 2007-02-02 |
| Paper # | ED2006-253,SDM2006-241 |
| Volume (vol) | vol.106 |
| Number (no) | 520 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |