| Presentation | 2007-02-02 Ballistic electron transport properties and rectification effects in InAs/AlGaSb mesoscopic structures Masatoshi KOYAMA, Hiroshi TAKAHASHI, Tatsuya INOUE, Toshihiko MAEMOTO, Shigehiko SASA, Masataka INOUE, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We fabricated and characterized electron transport properties and rectification effects of ballistic rectifiers with InAs/AlGaSb heterostructures which has relatively long electron mean free path at room temperature. Clear rectification effects are obtained by generating the potential drop which affected by electron scattering processes at etched boundaries such as anti-dot structure. As results, rectification effects were observed in each device at 4.2K and 77K, and additional introduction of waveguide structures enabled to rectification effects at 300K. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InAs-AlGaSb heterostructures / Ballistic electron transport / Nonlinear electron transport properties / Mesoscopic structures / Rectification effects |
| Paper # | ED2006-252,SDM2006-240 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/1/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ballistic electron transport properties and rectification effects in InAs/AlGaSb mesoscopic structures |
| Sub Title (in English) | |
| Keyword(1) | InAs-AlGaSb heterostructures |
| Keyword(2) | Ballistic electron transport |
| Keyword(3) | Nonlinear electron transport properties |
| Keyword(4) | Mesoscopic structures |
| Keyword(5) | Rectification effects |
| 1st Author's Name | Masatoshi KOYAMA |
| 1st Author's Affiliation | Nanomaterials, Microdevices Research Center, Osaka Institute of Technology() |
| 2nd Author's Name | Hiroshi TAKAHASHI |
| 2nd Author's Affiliation | Nanomaterials, Microdevices Research Center, Osaka Institute of Technology |
| 3rd Author's Name | Tatsuya INOUE |
| 3rd Author's Affiliation | Nanomaterials, Microdevices Research Center, Osaka Institute of Technology |
| 4th Author's Name | Toshihiko MAEMOTO |
| 4th Author's Affiliation | Nanomaterials, Microdevices Research Center, Osaka Institute of Technology |
| 5th Author's Name | Shigehiko SASA |
| 5th Author's Affiliation | Nanomaterials, Microdevices Research Center, Osaka Institute of Technology |
| 6th Author's Name | Masataka INOUE |
| 6th Author's Affiliation | Nanomaterials, Microdevices Research Center, Osaka Institute of Technology |
| Date | 2007-02-02 |
| Paper # | ED2006-252,SDM2006-240 |
| Volume (vol) | vol.106 |
| Number (no) | 520 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |