Presentation 2007-02-02
Electronic transport properties of nanographite on Silicon dioxide
Keita KONISHI, Takashi MATUSDA, Kanji YOH,
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Abstract(in English) Graphene has been a new material of interest with two-dimensional structure. We measured the effect of gate electric field on HOPG and the Hall measurement of kish graphite without isolating. Modulation by the gate electric field could be observed, unless change of magnitude was small. The thickness of the HOPG sample is still in the order of magnitude larger than the screening length of graphite, and thus only relatively small portion of the sample is supposed to be affected by the gate electric field. The kish graphite sample exhibit mobilities up to 2830 and 2430 cm^2/Vs at room and 77K respectively.
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Keyword(in English) graphene / two-dimensional structure / screening
Paper # ED2006-251,SDM2006-239
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Committee ED
Conference Date 2007/1/25(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electronic transport properties of nanographite on Silicon dioxide
Sub Title (in English)
Keyword(1) graphene
Keyword(2) two-dimensional structure
Keyword(3) screening
1st Author's Name Keita KONISHI
1st Author's Affiliation RCIQE, Hokkaido University()
2nd Author's Name Takashi MATUSDA
2nd Author's Affiliation RCIQE, Hokkaido University
3rd Author's Name Kanji YOH
3rd Author's Affiliation RCIQE, Hokkaido University
Date 2007-02-02
Paper # ED2006-251,SDM2006-239
Volume (vol) vol.106
Number (no) 520
Page pp.pp.-
#Pages 4
Date of Issue