Presentation | 2007-02-02 Electronic transport properties of nanographite on Silicon dioxide Keita KONISHI, Takashi MATUSDA, Kanji YOH, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Graphene has been a new material of interest with two-dimensional structure. We measured the effect of gate electric field on HOPG and the Hall measurement of kish graphite without isolating. Modulation by the gate electric field could be observed, unless change of magnitude was small. The thickness of the HOPG sample is still in the order of magnitude larger than the screening length of graphite, and thus only relatively small portion of the sample is supposed to be affected by the gate electric field. The kish graphite sample exhibit mobilities up to 2830 and 2430 cm^2/Vs at room and 77K respectively. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | graphene / two-dimensional structure / screening |
Paper # | ED2006-251,SDM2006-239 |
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Conference Information | |
Committee | ED |
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Conference Date | 2007/1/25(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Electronic transport properties of nanographite on Silicon dioxide |
Sub Title (in English) | |
Keyword(1) | graphene |
Keyword(2) | two-dimensional structure |
Keyword(3) | screening |
1st Author's Name | Keita KONISHI |
1st Author's Affiliation | RCIQE, Hokkaido University() |
2nd Author's Name | Takashi MATUSDA |
2nd Author's Affiliation | RCIQE, Hokkaido University |
3rd Author's Name | Kanji YOH |
3rd Author's Affiliation | RCIQE, Hokkaido University |
Date | 2007-02-02 |
Paper # | ED2006-251,SDM2006-239 |
Volume (vol) | vol.106 |
Number (no) | 520 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |