| Presentation | 2007-02-02 Non-volatile Ternary Content Addressable Memory using CoFe-based Magnetic Tunnel Junction Tetsuya UEMURA, Takao MARUKAME, Ken-ichi MATSUDA, Masafumi YAMAMOTO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An epitaxial Co_<50>Fe_<50>/MgO/Co_<50>Fe_<50> magnetic tunnel junction (MTJ) was fabricated and a relatively high tunnel magnetoresistance (TMR) ratio of 145% at room temperature (RT) was obtained. Four remanent magnetization states in the single-crystalline Co5oFe50 electrode, due to the cubic anisotropy with easy axes of the (110) directions, result in four possible angular-dependent TMRs, each separated by more than 20% at RT. Analysis of the asteroid curve for Co_<50>Fe_<50> indicated that the magnetic field along 22.5°from the <110> directions made it possible to change the magnetization direction of the selected cell without disturbing those of the half-selected cells. Furthermore, a ternary content addressable memory (TCAM) using the multi-state MTJ was proposed and its operation was analyzed through circuit simulation. In addition to the non-volatility, the proposed TCAM has an advantage to reducing the device count to 1/3 of that for conventional CMOS-based TCAM. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | magnetic tunnel junction / multiple-valued MRAM / ternary content addressable memory |
| Paper # | ED2006-250,SDM2006-238 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/1/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Non-volatile Ternary Content Addressable Memory using CoFe-based Magnetic Tunnel Junction |
| Sub Title (in English) | |
| Keyword(1) | magnetic tunnel junction |
| Keyword(2) | multiple-valued MRAM |
| Keyword(3) | ternary content addressable memory |
| 1st Author's Name | Tetsuya UEMURA |
| 1st Author's Affiliation | Division of Electronics for Informatics, Hokkaido University() |
| 2nd Author's Name | Takao MARUKAME |
| 2nd Author's Affiliation | Division of Electronics for Informatics, Hokkaido University |
| 3rd Author's Name | Ken-ichi MATSUDA |
| 3rd Author's Affiliation | Division of Electronics for Informatics, Hokkaido University |
| 4th Author's Name | Masafumi YAMAMOTO |
| 4th Author's Affiliation | Division of Electronics for Informatics, Hokkaido University |
| Date | 2007-02-02 |
| Paper # | ED2006-250,SDM2006-238 |
| Volume (vol) | vol.106 |
| Number (no) | 520 |
| Page | pp.pp.- |
| #Pages | 6 |
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